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VN2010L

型号：

VN2010L

描述：

N沟道增强型MOS晶体管[ N-Channel Enhancement-Mode MOS Transistors ]

品牌：

TEMIC[ TEMIC SEMICONDUCTORS ]

页数：

4 页

PDF大小：

111 K

下载PDF手册
VN2010L/BS107  
Siliconix  
NĆChannel EnhancementĆMode MOS Transistors  
Product Summary  
Part Number  
V(BR)DSS Min (V) rDS(on) MaxW)(  
VGS(th) (V)  
ID (A)  
VN2010L  
BS107  
10  
28  
@
@
V = 4.5  
V
V
0.8 to 1.8  
0.19  
0.12  
GS  
200  
V = 2.8  
GS  
0.8 to  
3
Features  
D Low OnĆResistance: W  
Benefits  
D Low Offset Voltage  
Applications  
6
D HighĆVoltage Drivers:  
Relays, Solenoids,  
Lamps, Hammers, Displays, Transistors, etc.  
D Telephone Mute Switches, Ringer Circuits  
D Power Supply, Converters  
D Secondary Breakdown Free:  
2D20FuVllĆVoltage Operation  
D Low Power/Voltage Driven  
D Easily Driven Without Buffer  
D Low Input and Output LeakagDe Low Error Voltage  
RunĆAway"  
D Motor Control  
D Excellent Thermal Stability  
D No HighĆTemperature  
TOĆ226AA  
(TOĆ92)  
TOĆ92Ć18RM  
(TOĆ18 Lead Form)  
1
1
S
G
D
D
G
S
2
3
2
3
Top View  
VN2010L  
Top View  
BS107  
Absolute Maximum Ratings (=T _C25 Unless Otherwise Noted)  
A
Parameter  
Symbol  
VN2010L  
Unit  
BS107  
DrainĆSource Voltage  
GateĆSource Voltage  
V
200  
"30  
0.19  
0 . 1 2  
0.8  
200  
"25  
0.12  
DS  
GS  
V
V
T = 2_5C  
A
Continuous Drain Current (T ==150_C)  
I
J
D
T =  
A
1_C0 0  
A
a
P u l s e d  
Power Dissipation  
Maximum JunctionĆtoĆAmbient  
D r a i n  
C u r r e n t  
I
DM  
T = 2_5C  
0.8  
0.5  
A
P
W
D
T = 10_0C  
0.32  
156  
A
R
thJA  
250  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T ,  
J
T
stg  
-55 to 150  
Notes  
a. Pulse width limited by maximum junction temperature.  
P-38283—Rev.  
B
(08/15/94)  
1
VN2010L/BS107  
Siliconix  
Specificationsa  
Limits  
VN2010L  
BS107  
Parameter  
Symbol  
Test Conditions  
Typb Min Max Min Max Unit  
Static  
DrainĆSource Breakdown Voltage V  
V
=
=
0 V,= I 1m0A0  
D
220  
1.2  
200  
0.8  
200  
0.8  
(BR)DSS  
GS  
V
GateĆThreshold Voltage  
V
V
V, I  
D
=
1
mA  
1.8  
3
GS(th)  
DS  
GS  
V
=
0
0
V, ="V 20  
GS  
V
"10  
DS  
GateĆBody Leakage  
I
nA  
GSS  
V
DS  
=
=
=
=
V, ="V 15  
GS  
V
"10  
1
Drain Leakage Current  
I
V
70 V, =V 0.2  
GS  
V
V
DSX  
DS  
V
130 V, =V  
GS  
0
0
0.03  
DS  
DS  
mA  
V
160 V, =V  
GS  
V
1
Zero Gate Voltage Drain Current I  
DSS  
T
=
_1C25  
V
100  
J
c
OnĆState Drain Current  
I
V
V
V
=
=
=
10 V,= V10  
GS  
0.7  
6
0.1  
A
D(on)  
DS  
GS  
GS  
2.8 V,= I 0.02  
D
A
28  
c
4.5 V,= I 0.05  
D
A
6
10  
20  
DrainĆSource OnĆResistance  
r
W
DS(on)  
T
=
_1C25  
A
11  
180  
J
c
Forward Transconductance  
g
V
=
15 V,= I 0.1  
D
125  
fs  
DS  
mS  
pF  
Common Source  
Output Conductance  
g
V
DS  
=
15  
D
=V, 0I.05  
A
0.15  
c
os  
Dynamic  
Input Capacitance  
C
C
35  
60  
30  
15  
iss  
Output Capacitance  
9
1 MHz  
V
DS  
=25 V, V=  
GS  
0
V,  
f
=
oss  
Reverse Transfer Capacitance  
C
1
rss  
Switchingd  
V
=
25 V, =R 2W50  
L
^ 0.1
0.
A1 , V
A
,
 
V
= 10
1
V
0  
TurnĆOn Time  
TurnĆOff Time  
t
5
20  
30  
DD  
ON  
I
V
ns  
D
GEN  
R
G
= W25  
t
21  
OFF  
Notes  
a.  
b. For DESIGN AID ONLY, not subject to production testing.  
T
= _C25 unless otherwise noted.  
VNDQ20  
A
c. Pulse test: vP3W00 ms duty cyvcle2%.  
d. Switching time is essentially independent of operating temperature.  
P-38283—Rev.  
B
(08/15/94)  
2
VN2010L/BS107  
Siliconix  
Typical Characteristics _(C25 Unless Otherwise Noted)  
Ohmic Region Characteristics  
Output Characteristics for Low Gate Drive  
0.5  
0.4  
0.3  
0.2  
0.1  
0
50  
40  
30  
20  
10  
0
VGS = 10 V  
5
V
V
VGS = 2.2 V  
V
T
=
25°C  
T
=
25°C  
J
J
4
2.0  
6
V
1.8  
1.6  
V
V
3
2
V
1.4  
1.2  
1.0  
V
V
V
0.6  
V
V
5
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
1
2
3
4
V
DS  
-
DrainĆtoĆSource Voltage (V)  
-V DrainĆtoĆSource Voltage (V)  
DS  
Transfer Characteristics  
OnĆResistance vs. GateĆtoĆSource Voltage  
500  
400  
300  
200  
100  
0
28  
24  
20  
16  
12  
8
VDS = 15 V  
25°C  
T
=
25°C  
J
T
=
-55°C  
J
125°C  
I D = 500 mA  
250 mA  
50 mA  
4
0
0
1
2
3
4
5
0
4
8
12  
16  
20  
V
GS  
-
GateĆSource Voltage (V)  
-V GateĆSource Voltage (V)  
GS  
Normalized OnĆResistance  
vs. Junction Temperature  
OnĆResistance vs. Drain Current  
12.5  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
ID = 50 mA  
VGS = 4.5 V  
10.0  
7.5  
5.0  
2.5  
0
VGS = 10 V  
10 mA  
0.50  
0
0.2  
0.4  
0.6  
0.8  
1.0  
-50  
-10  
30  
70  
110  
150  
(
I
-
Drain Current (A)  
-
T Junction Temp_eCra)ture  
D
J
P-38283—Rev.  
B
(08/15/94)  
3
VN2010L/BS107  
Siliconix  
Typical Characteristics _(C25 Unless Otherwise Noted) (Cont'd)  
Threshold Region  
Capacitance  
10  
60  
50  
40  
30  
20  
10  
0
VGS = 0 V  
VDS = 5 V  
f
= 1 MHz  
T
=
150°C  
J
Ciss  
1
Coss  
0°C  
0.1  
0.01  
Crss  
-55°C  
0
0.4  
0.8  
1.2  
1.6  
2.0  
0
10  
20  
30  
40  
50  
V
GS  
-
GateĆtoĆSource Voltage (V)  
V
DS  
-
DrainĆtoĆSource Voltage (V)  
Gate Charge  
Load Condition Effects on Switching  
15.0  
12.5  
10.0  
7.5  
5.0  
2.5  
0
100  
50  
V
R
V
=
= W25  
25  
V
DD  
G
I D = 0.1 A  
=
0
to 10  
V
GS  
VDS = 100 V  
20  
10  
5
160  
V
t
d(off)  
t
t
r
d(on)  
2
1
t
f
0
250  
500  
750  
1000  
1250  
0.01  
0.1  
1.0  
Q
g
-
Total Gate Charge (pC)  
I
- Drain Current (A)  
D
Normalized Effective Transient Thermal Impedance, JunctionĆtoĆAmbient (TOĆ226AA)  
1
Duty Cycle  
0.2  
=
0.5  
Notes:  
0.1  
0.05  
0.02  
P
0.1  
DM  
t
1
t
2
t
1
2
1. Duty Cycle,  
D
=
=
t
2. Per Unit Base  
=R _15C6/W  
thJA  
0.01  
(t)  
3.  
T
JM  
-
T= PZ  
A DM thJA  
Single Pulse  
1
0.01  
0.1  
10  
100  
Square Wave Pulse Duration (sec)  
1 K  
10 K  
t
-
1
P-38283—Rev.  
B
(08/15/94)  
4
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 		VN2010LP001 [ Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 ] 2 页

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 		VN2010LP002 [ Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 ] 2 页

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 		VN2010LP004 [ Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 ] 2 页

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 		VN2010LP006 [ Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 ] 2 页

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 		VN2010LP008 [ Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 ] 2 页

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