VN2001L
Vishay Siliconix
New Product
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
Typ
Parameter
Symbol
Test Conditions
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 100 mA
200
2.0
(BR)DSS
GS
D
V
V
V
= V , I = 250 mA
3.0
4.0
"100
1
GS(th)
DS
GS D
I
V
= 0 V, V = "20 V
nA
GSS
DS
GS
V
= 200 V, V = 0 V
GS
DS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
T = 55_C
10
J
a
On-State Drain Current
I
V
= 10 V, V = 10 V
1
A
D(on)
GS
V
= 10 V, I = 0.56 A
0.95
1.0
1.8
0.8
1.2
1.3
GS
D
a
Drain-Source On-Resistance
r
W
DS(on)
V
= 6 V, I = 0.54 A
D
GS
DS
a
Forward Transconductance
g
fs
V
= 10 V, I = 0.56A
S
V
D
a
Diode Forward Voltage
V
I
= 0.5 A, V = 0 V
1.2
6
SD
S
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
g
3.6
0.8
1.2
4
Q
V
= 90 V, V = 10 V, I = 0.5 A
nC
gs
gd
DS
GS
D
Q
R
g
W
Turn-On Delay Time
Rise Time
t
5.5
10
22
18
28
10
16
40
30
45
d(on)
V
D
= 100 V, R = 200 W
L
t
r
DD
I
^^ 0.5 A, V
= 10 V
GEN
= 25 W
Turn-Off Delay Time
Fall Time
t
d(off)
ns
R
G
t
f
Source-Drain Reverse Recovery Time
t
rr
I
= 0.5 A, di/dt = 100 A/ms
F
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
2.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
= 10 thru 5 V
GS
1.6
1.2
0.8
0.4
0.0
4.5 V
T = 125_C
J
4 V
25_C
3.5 V
−55_C
0
1
2
3
4
5
0
1
2
3
4
5
V
− Drain-to-Source Voltage (V)
V
− Gate-to-Source Voltage (V)
GS
DS
Document Number: 72654
S-40246—Rev. A, 16-Feb-04
www.vishay.com
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