BZX55B...
Silicon Epitaxial Planar Z–Diodes
Features
Very sharp reverse characteristic
Low reverse current level
Low noise
Very high stability
Available with tighter tolerances
V –tolerance ± 2%
Z
Applications
Voltage stabilization
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
l=4mm, T =25 C
Type
Symbol
Value
500
Unit
mW
mA
C
P
V
L
I
Z
P /V
V
Z
T
175
–65...+175
j
T
stg
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
Symbol
R
thJA
Value
300
Unit
K/W
l=4mm, T =constant
L
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =100mA
Type
Symbol Min
Typ Max Unit
1.5
V
F
V
F
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