CZT5401
www.centralsemi.com
SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5401 is a PNP
silicon transistor manufactured by the epitaxial planar
process, epoxy molded in a surface mount package,
designed for high voltage amplifier applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
A
Collector-Base Voltage
V
V
V
160
150
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
V
5.0
V
Continuous Collector Current
Power Dissipation
I
600
mA
W
C
P
2.0
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
J, stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
50
UNITS
nA
μA
nA
V
I
I
I
V
V
V
=120V
CBO
CBO
EBO
CB
CB
EB
=120V, T =100°C
A
=3.0V
50
50
BV
BV
BV
I =100μA
160
150
5.0
CBO
CEO
C
I =1.0mA
V
C
I =10μA
V
EBO
E
V
V
V
V
I =10mA, I =1.0mA
0.2
0.5
1.0
1.0
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =50mA, I =5.0mA
V
C
B
I =10mA, I =1.0mA
V
C
B
I =50mA, I =5.0mA
V
C
B
h
h
h
V
=5.0V, I =1.0mA
50
60
CE
CE
CE
CE
CB
CE
CE
C
V
V
V
V
V
V
=5.0V, I =10mA
240
FE
C
=5.0V, I =50mA
50
FE
C
f
=10V, I =10mA, f=100MHz
100
300
6.0
MHz
pF
T
C
C
=10V, I =0, f=1.0MHz
ob
E
h
=10V, I =1.0mA, f=1.0kHz
40
200
fe
C
N
=5.0V, I =250μA, R =1.0kΩ,
F
C S
f=10Hz to 15.7kHz
8.0
dB
R6 (1-March 2010)
