IXSX 35N120AU1
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247TM (IXSX)
gfs
IC = IC90; VCE = 10 V,
20
26
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
IC(on)
VGE = 15 V, VCE = 10 V
170
A
Cies
Coes
Cres
3900
295
60
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
150
40
190 nC
60 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Inches
Min. Max. Min. Max.
70
100 nC
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Inductive load, TJ = 25°C
td(on)
80
150
400
500
10
ns
ns
IC = IC90, VGE = 15 V,
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
tri
td(off)
tfi
L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W
Switching times may increase for VCE
(Clamp) > 0.8 • VCES, higher TJ or
increased RG
900 ns
700 ns
mJ
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
Eoff
e
L
L1
5.45 BSC
19.81 20.32
.215 BSC
.780 .800
.150 .170
td(on)
tri
80
150
8
ns
ns
Inductive load, TJ = 125°C
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 .244
.170 .190
IC = IC90, VGE = 15 V,
Eon
td(off)
tfi
mJ
ns
L = 100 mH, VCE = 0.8 VCES, RG = 2.7 W
Switching times may increase for VCE
(Clamp) > 0.8 • VCES, higher TJ or
increased RG
400
700
15
ns
Eoff
mJ
RthJC
RthCK
0.42 K/W
K/W
0.15
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = IC90, VGE = 0 V, Pulse test,
2.35
36
V
t £ 300 ms, duty cycle d £ 2 %, TJ = 125°C
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 480 A/ms
VR = 540 V
32
225
40
A
ns
TJ = 100°C
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V TJ = 25°C
60 ns
RthJC
0.65 K/W
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 5
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
