请登录

免费注册

首页购物车我的订单会员中心

联系客服

823711899

点击QQ咨询

400-618-9990

拨打电话咨询

购物车 0

上传BOM

产品分类

找货询价

QQ咨询

会员中心

购物车

技术支持

售后咨询

DZT955-13

型号：

DZT955-13

描述：

低VCE （ SAT） PNP表面贴装晶体管[ LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR ]

品牌：

DIODES[ DIODES INCORPORATED ]

页数：

4 页

PDF大小：

186 K

下载PDF手册

DZT955

LOW V_CE(SAT)PNP SURFACE MOUNT TRANSISTOR

Please click here to visit our online spice models database.

Features

•

Epitaxial Planar Die Construction

Ideally Suited for Automated Assembly Processes

Ideal for Medium Power Switching or Amplification Applications

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

SOT-223

Mechanical Data

•

Case: SOT-223

Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

Marking Information: See Page 4

Ordering Information: See Page 4

Weight: 0.115 grams (approximate)

TOR

LLEC

2,4

3 E

2 C

1 B

•

C 4

ASE

•

EMITTER

Schematic and Pin Configuration

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Symbol

Value

-180

-140

-6

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

-4

-10

I_CM

Thermal Characteristics

Characteristic

Symbol

P_D

R_θ

Value

Unit

Power Dissipation (Note 3) @ T_A= 25°C

125

°C/W

°C

Thermal Resistance, Junction to Ambient Air (Note 3) @ T_A= 25°C

Operating and Storage Temperature Range

-55 to +150

T_j, T_STG

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

DS31280 Rev. 2 - 2

1 of 4

www.diodes.com

DZT955

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

-180

-140

-6

⎯

I_C= -100μA, I_E= 0

I_C= -10mA, I_B= 0

I_E= -100μA, I_C= 0

_CB= -150V, I_E= 0

_CB= -150V, I_E= 0,

μA

-50

-1

Collector Cutoff Current

I_CBO

I_EBO

⎯

T_A= 100°C

V_EB= - 6V, I_C= 0

Emitter Cutoff Current

-10

ON CHARACTERISTICS (Note 4)

⎯

-60

I_C= -100mA, I_B= -5mA

I_C= -500mA, I_B= -50mA

I_C= -1A, I_B= -100mA

I_C= -3A, I_B= -300mA

-120

-150

-370

Collector-Emitter Saturation Voltage

V_CE(SAT)

Base-Emitter Saturation Voltage

Base-Emitter Turn-On Voltage

V_BE(SAT)

V_BE(ON)

-1110

-950

I_C= -3A, I_B= -300mA

I_C= -3A, V_CE= -5V

100

⎯

300

⎯

I_C= -10mA, V_CE= -5V

I_C= -1A, V_CE= -5V

I_C= -3A, V_CE= -5V

I_C= -10A, V_CE= -5V

DC Current Gain

h_FE

⎯

SMALL SIGNAL CHARACTERISTICS

I_C= -100mA, V_CE= -10V,

f = 100MHz

V_CB= -20V, f = 1MHz

Current Gain-Bandwidth Product

f_T

150

MHz

⎯

Output Capacitance

C_obo

SWITCHING CHARACTERISTICS

t_on

t_off

⎯

430

⎯

I_C= -1A, I_B1= -100mA

I_B2= 100mA, V_CC= -50V

Switching Times

Notes:

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

0.8

0.6

1.0

0.8

= -5mA

= -4mA

= -3mA

0.6

0.4

= -2mA

0.2

= -1mA

T_A, AMBIENT TEMPERATURE (°C)

Fig. 1 Max Power Dissipation vs. Ambient Temperature

150

100

125

-V_CE, COLLECTOR-EMITTER VOLTAGE (V)

Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage

DS31280 Rev. 2 - 2

2 of 4

www.diodes.com

DZT955

350

300

0.3

0.2

250

200

150

100

0.1

0.001

0.01

0.1

0.01

0.1

-I_C, COLLECTOR CURRENT (A)

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

1.2

1.0

0.8

0.6

0.4

0.8

0.6

0.4

0.2

0.001

0.01

0.1

0.001

0.01

0.1

-I_C, COLLECTOR CURRENT (A)

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

1,000

100

200

150

f = 1MHz

= -10V

f = 100MHz

100

0.1

V_R, REVERSE VOLTAGE (V)

Fig. 7 Typical Output Capacitance Characteristics

100

10 20 30 40 50 60 70 80 90 100

-I_C, COLLECTOR CURRENT (mA)

Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current

DS31280 Rev. 2 - 2

3 of 4

www.diodes.com

DZT955

Ordering Information (Note 5)

Device

Packaging

Shipping

DZT955-13

SOT-223

2500/Tape & Reel

Notes:

5. For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.

Marking Information

(Top View)

P414 = Product Type Marking Code

YWW = Date Code Marking

Y = Last digit of year ex: 7 = 2007

WW = Week code 01 - 52

YWW

P414

Package Outline Dimensions

SOT-223

Dim Min Max Typ

1.55 1.65 1.60

A1 0.010 0.15 0.05

2.90 3.10 3.00

0.60 0.80 0.70

0.20 0.30 0.25

6.45 6.55 6.50

3.45 3.55 3.50

6.90 7.10 7.00

—

4.60

2.30

0.85 1.05 0.95

0.84 0.94 0.89

All Dimensions in mm

Suggested Pad Layout: (Dimensions in mm)

IMPORTANT NOTICE

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product

described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall

assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,

harmless against all damages.

LIFE SUPPORT

Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written

approval of the President of Diodes Incorporated.

DS31280 Rev. 2 - 2

4 of 4

www.diodes.com

DZT955

厂商	型号	描述	页数
DIODES	DZT2222A	NPN表面贴装晶体管[ NPN SURFACE MOUNT TRANSISTOR ]	4 页
DIODES	DZT2222A-13	NPN表面贴装晶体管[ NPN SURFACE MOUNT TRANSISTOR ]	4 页
DIODES	DZT2907A	PNP表面贴装晶体管[ PNP SURFACE MOUNT TRANSISTOR ]	4 页
DIODES	DZT2907A-13	PNP表面贴装晶体管[ PNP SURFACE MOUNT TRANSISTOR ]	4 页
DIODES	DZT3150	NPN表面贴装晶体管[ NPN SURFACE MOUNT TRANSISTOR ]	4 页
DIODES	DZT3150-13	NPN表面贴装晶体管[ NPN SURFACE MOUNT TRANSISTOR ]	4 页
DIODES	DZT3150_1	NPN表面贴装晶体管[ NPN SURFACE MOUNT TRANSISTOR ]	4 页
DIODES	DZT491	NPN表面贴装晶体管[ NPN SURFACE MOUNT TRANSISTOR ]	4 页
DIODES	DZT491-13	NPN表面贴装晶体管[ NPN SURFACE MOUNT TRANSISTOR ]	4 页
DIODES	DZT5401	PNP表面贴装晶体管[ PNP SURFACE MOUNT TRANSISTOR ]	4 页