DZTA92
PNP SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
3
2
1
Complementary NPN Type Available (DZTA42)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
4
SOT-223
Mechanical Data
COLLECTOR
3 E
2,4
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
2
C
C 4
T
1
•
•
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
1 B
IEW
BASE
OP V
3
EMITTER
•
•
•
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams (approximate)
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Continuous Collector Current
Symbol
VCBO
VCEO
VEBO
IB
Value
-300
-300
-5
-100
-500
Unit
V
V
V
mA
mA
IC
Thermal Characteristics
Characteristic
Symbol
Value
1
Unit
W
Power Dissipation @ TA = 25°C (Note 3)
Pd
125
Thermal Resistance, Junction to Ambient @ TA = 25°C (Note 3)
Operating and Storage Temperature Range
οC/W
Rθ
JA
-55 to +150
Tj, TSTG
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
Symbol
Min
Typ
Max
Unit
Test Conditions
IC = -100μA, IE = 0
IC = -1mA, IB = 0
IE = -100μA, IC = 0
VCB = -200V, IE = 0
VEB = -3V, IC = 0
-300
-300
-5
V
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.25
-0.1
⎯
⎯
μA
μA
IEBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-0.5
-0.9
⎯
⎯
⎯
V
V
VCE(SAT)
VBE(SAT)
⎯
⎯
25
40
25
⎯
⎯
⎯
⎯
⎯
IC = -20mA, IB = -2mA
IC = -20mA, IB = -2mA
IC = -1mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -30mA, VCE = -10V
DC Current Gain
V
hFE
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
Output Capacitance
50
MHz
pF
fT
Cobo
⎯
⎯
⎯
6
I
C = -10mA, VCE = -20V, f = 100MHz
⎯
VCB = -20V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1“ x 0.85” x 0.052”; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d< = 2%
DS30521 Rev. 4 - 2
1 of 4
DZTA92
© Diodes Incorporated
www.diodes.com
