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QTLP660CIR

型号:

QTLP660CIR

描述:

1.8毫米DOME LENS发光二极管[ 1.8mm DOME LENS EMITTING DIODE ]

品牌:

FAIRCHILD[ FAIRCHILD SEMICONDUCTOR ]

页数:

7 页

PDF大小:

342 K

QTLP660CIR  
1.8mm DOME LENS  
EMITTING DIODE  
QTLP660CIR  
PACKAGE DIMENSIONS  
0.134 (3.40)  
0.118 (3.00)  
Ø0.075 (1.9)  
Ø0.067 (1.7)  
0.102 (2.6)  
0.087 (2.2)  
0.091 (2.3)  
0.083 (2.1)  
TOP  
R0.004 (0.1)  
5°  
7°  
0.024 (0.6)  
0.016 (0.4)  
0.106 (2.7)  
0.098 (2.5)  
SIDE  
0.028 (0.7)  
0.020 (0.5)  
0.079 (2.0)  
BOTTOM  
+
-
POLARITY  
NOTE:  
Dimensions for all drawings are in inches (mm).  
FEATURES  
1.8mm Dome Lens Package  
Available in 0.315” (8mm) width tape on 7” (178mm) diameter reel; 2,000 units per reel  
Narrow Emission Angle, 30°  
Wavelength = 940 nm, GaAs  
Water Clear Lens  
Matched Photosensor: QTLP660CPDF  
© 2003 Fairchild Semiconductor Corporation  
Page 1 of 7  
3/5/03  
QTLP660CIR  
1.8mm DOME LENS  
EMITTING DIODE  
QTLP660CIR  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specied)  
A
Parameter  
Symbol  
Rating  
Unit  
Operating Temperature  
Storage Temperature  
T
-40 to +85  
°C  
°C  
°C  
°C  
mA  
V
OPR  
T
-40 to +90  
STG  
(1,2,3)  
(1,2)  
Soldering Temperature (Iron)  
T
240 for 5 sec  
SOL-I  
Soldering Temperature (Flow)  
Continuous Forward Current  
Reverse Voltage  
T
260 for 10 sec  
SOL-F  
I
65  
5
F
V
P
R
D
(4)  
Power Dissipation  
130  
1.0  
mW  
A
Peak Forward Current (Pulse width = 100µs, Duty Cycle=1%)  
I
FD  
Notes:  
1. RMA ux is recommended.  
2. Methanol or isopropyl alcohols are recommended as cleaning agents.  
3. Soldering iron tip at 1/16" (1.6mm) from housing  
4. At 25°C or below  
ELECTRICAL / OPTICAL CHARACTERISTICS (T =25°C)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNITS  
Peak Emission Wavelength I = 20 mA  
λP  
1.0  
940  
15  
1.2  
1.4  
2.6  
nm  
F
Emission Angle  
Forward Voltage  
Reverse Current  
Radiant Intensity  
I = 20 mA  
Θ
Deg.  
F
I = 20 mA  
1.5  
1.85  
4.0  
100  
F
I = 100 mA, t = 100 µs, Duty Cycle = 0.01  
V
F
V
F
P
I = 1 A, t = 100 µs, Duty Cycle = 0.01  
F
P
V = 5 V  
I
µA  
R
R
I = 20 mA  
3.0  
14  
140  
1
F
I = 100 mA, t = 100 µs, Duty Cycle = 0.01  
Ee  
mW/sr  
F
P
I = 1 A, t = 100 µs, Duty Cycle = 0.01  
F
P
Rise Time  
Fall Time  
I = 100 mA,  
t
µs  
µs  
F
r
t = 20 ms  
t
1
P
f
© 2003 Fairchild Semiconductor Corporation  
Page 2 of 7  
3/5/03  
QTLP660CIR  
1.8mm DOME LENS  
EMITTING DIODE  
QTLP660CIR  
TYPICAL PERFORMANCE CURVES  
Fig. 1 Forward Current vs.  
Ambient Temperature  
140  
Fig. 2 Relative Radiant Intensity vs.  
Wavelength  
100  
IF = 20 mA  
TA = 25˚C  
120  
100  
80  
80  
60  
40  
20  
60  
40  
20  
0
-25  
0
20  
40  
60  
80  
100  
0
880 900 920 940 960 980 1000 1020 1040  
Ambient Temperature (°C)  
Wavelengthl λ (nm)  
Fig. 3 Peak Emission Wavelength vs.  
Fig. 4 Forward Current vs.  
Ambient Temperature  
Forward Voltage  
104  
980  
960  
940  
920  
tp=100µs  
Duty Cycle=0.01  
103  
102  
101  
900  
-25  
0
25  
50  
75  
100  
Ambient Temperature T (°C)  
A
0
1
2
3
4
Forward Voltage (V)  
Fig. 5 Relative Intensity vs.  
Ambient Temperature (°C)  
5
Fig. 6 Relative Radiant Intensity vs.  
Angular Displacement  
30°  
20°  
10°  
0°  
10°  
20°  
30°  
IF=20mA  
3
1
1.0  
0.9  
40°  
50°  
0.8  
0.7  
60°  
70°  
80°  
0.1  
0.6  
0.4  
0.2  
0
0.2  
0.4  
0.6  
25  
50  
75  
100  
120  
© 2003 Fairchild Semiconductor Corporation  
Page 3 of 7  
3/5/03  
QTLP660CIR  
1.8mm DOME LENS  
EMITTING DIODE  
QTLP660CIR  
TYPICAL PERFORMANCE CURVES  
Fig. 7 Relative Intensity vs.  
Forward Current  
1000  
100  
10  
1
100  
101  
102  
103  
104  
IF Forward Current (mA)  
© 2003 Fairchild Semiconductor Corporation  
Page 4 of 7  
3/5/03  
QTLP660CIR  
1.8mm DOME LENS  
EMITTING DIODE  
QTLP660CIR  
RECOMMENDED PRINTED CIRCUIT BOARD PATTERN  
0.079 (2.00)  
0.098 (2.50)  
0.098 (2.50)  
0.098 (2.50)  
RECOMMENDED IR REFLOW SOLDERING PROFILE  
5 sec MAX  
soldering time  
240° C MAX  
+5° C/s MAX  
-5° C/s MAX  
60 - 120 sec  
Preheating  
120 - 150° C MAX  
© 2003 Fairchild Semiconductor Corporation  
Page 5 of 7  
3/5/03  
QTLP660CIR  
1.8mm DOME LENS  
EMITTING DIODE  
QTLP660CIR  
TAPE AND REEL DIMENSIONS  
13.2 1.5  
2.5 0.5  
Ø178.0 1.0  
Ø60.2 0.5  
2.5 0.5  
16.0 0.2  
Ø13.0 0.5  
Progressive direction  
2.0 0.05  
4.0  
1.55 0.05  
0.230 0.1  
4.0  
2.75  
2.6  
Dimensional tolerance is 0.1mm unless otherwise specified  
Polarity  
Angle: 0.5  
Unit: mm  
© 2003 Fairchild Semiconductor Corporation  
Page 6 of 7  
3/5/03  
QTLP660CIR  
1.8mm DOME LENS  
EMITTING DIODE  
QTLP660CIR  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO  
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME  
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body, or  
(b) support or sustain life, and (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in a significant injury of the user.  
2. A critical component in any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
© 2003 Fairchild Semiconductor Corporation  
Page 7 of 7  
3/5/03  
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