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QSL12

型号:

QSL12

描述:

通用晶体管(隔离的晶体管和二极管)[ General purpose transistor (isolated transistor and diode) ]

品牌:

ROHM[ ROHM ]

页数:

5 页

PDF大小:

81 K

QSL12  
Transistors  
General purpose transistor  
(isolated transistor and diode)  
QSL12  
A 2SD2675 and a RB461F are housed independently in a TSMT5 package.  
zExternal dimensions (Unit : mm)  
zApplications  
DC / DC converter  
Motor driver  
QSL12  
2.8  
1.6  
zFeatures  
1) Tr : Low VCE(sat)  
Di : Low VF  
2) Small package  
0.3 to 0.6  
ROHM : TSMT5  
Each lead has same dimensions  
Abbreviated symbol : L12  
zStructure  
Silicon epitaxial planar transistor  
Schottky barrier diode  
zEquivalent circuit  
(5)  
(4)  
Di2  
Tr1  
(1)  
(2)  
(3)  
zPackaging specifications  
Type  
Package  
QSL12  
TSMT5  
L12  
Marking  
Code  
TR  
Basic ordering unit(pieces)  
3000  
Rev.A  
1/4  
QSL12  
Transistors  
zAbsolute maximum ratings (Ta=25°C)  
Tr1  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
30  
30  
6
Unit  
V
V
VCBO  
VCEO  
VEBO  
V
I
C
1
2
0.9  
A
A
Collector current  
1  
I
CP  
Power dissipation  
Junction temperature  
Range of storage temperature  
Pc  
Tj  
Tstg  
W /ELEMENT 2  
150  
40 to +125  
°C  
°C  
1 Single pulse, Pw=1ms  
2 Mounted on a 25mm+ 25mm t0.8mm ceramic substrate  
+
Di2  
Parameter  
Peak reverse voltage  
Symbol  
Limits  
25  
Unit  
V
V
RM  
Reverse voltage (DC)  
V
R
20  
V
Average rectified forward current  
I
F
700  
mA  
F
orward current surge peak (60H  
Z
, 1)  
I
P
FSM  
3
0.7  
A
Power dissipation  
D
W /ELEMENT ∗  
Junction temperature  
Range of storage temperature  
Tj  
Tstg  
125  
40 to +125  
°C  
°C  
Mounted on a 25mm 25mm t0.8mm ceramic substrate  
+
+
Tr1&Di2  
Parameter  
Symbol  
Limits  
0.5  
1.25  
Unit  
W /TOTAL  
W /TOTAL  
1
2
Total power disipation  
PD  
1 Each terminal mounted on a recommended land.  
2 Mounted on a 25mm 25mm t0.8mm ceramic substrate.  
+
+
zElectrical characteristics (Ta=25°C)  
Tr1  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
Collector-base breakdown voltage  
BVCBO  
30  
30  
6
V
V
I
I
I
C
=10µA  
=1mA  
Collector-emitter breakdown voltage BVCEO  
C
Emitter-base breakdown voltage  
Collector cutoff current  
Emitter cutoff current  
BVEBO  
V
E
=10µA  
I
CBO  
EBO  
CE(sat)  
FE  
100  
100  
nA  
nA  
V
CB=30V  
I
VEB=6V  
Collector-emitter saturation voltage  
DC current gain  
V
120 350 mV  
I
C
/I  
B
=500mA/25mA  
=2V/100mA  
CE=2V, I =100mA, f=100MHz  
CB=10V, I =0A, f=1MHz  
h
270  
320  
7
680  
V
V
V
CE/IC  
Transition frequency  
f
T
MHz  
pF  
E
Collector output capacitance  
Cob  
E
Pulsed  
Di2  
Parameter  
Forward voltage  
Symbol  
Min.  
Typ.  
Max.  
490  
200  
Unit  
Conditions  
IF=700mA  
450  
9
mV  
µA  
ns  
V
F
I
R
V
R=20V  
Reverse current  
Reverse recovery fime  
t
rr  
I
F
=I  
R=100mA, Irr=0.1IR  
Rev.A  
2/4  
QSL12  
Transistors  
zElectrical characteristic curves  
Tr1  
1000  
10  
1
10  
1
V
CE=2V  
Ta=25°C  
CE=2V  
I
C B=20/1  
/I  
Pulsed  
V
Ta=100°C  
Pulsed  
Ta=40°C  
Ta=25°C  
Ta=25°C  
Ta=40°C  
Ta=100°C  
V
V
BE(sat)  
100  
0.1  
I
C/I  
B
=50/1  
CE(sat)  
Ta=100°C  
IC/IB=20/1  
0.1  
0.01  
0.001  
Ta=25°C  
Ta=40°C  
I
C/I  
B
=10/1  
10  
0.001  
0.01  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
0.001  
0.01  
0.1  
1
COLLECTOR CURRENT : I  
C
(A)  
COLLECTOR CURRENT : IC (A)  
COLLECTOR CURRENT : I  
C
(A)  
Fig.1 DC current gain  
Fig.3 Collector-emitter saturation voltage  
vs. collector current  
Fig.2 Collector-emitter saturation voltage  
base-emitter saturation voltage  
vs. collector current  
vs. collector current  
1
0.1  
1000  
1000  
V
CE=2V  
Ta=25°C  
Pulsed  
V
CE=2V  
tstg  
f=100MHz  
Ta=25°C  
100  
tf  
Ta=100°C  
Ta=40°C  
100  
tr  
tdon  
0.01  
0.001  
10  
Ta=25°C  
V
CE=5V  
IC/IB=20/1  
1
10  
0.01  
0
0.5  
1
1.5  
0.01  
0.1  
1
0.1  
1
BASE TO EMITTER CURRENT : VBE (V)  
EMITTER CURRENT : I  
E
(A)  
COLLECTOR CURRENT : IC (A)  
Fig.5 Gain bandwidth product  
vs. emitter current  
Fig.6 Switching time  
Fig.4 Grounded emitter propagation  
characteristics  
100  
Ta  
=
25°C  
0A  
1MHz  
Cib  
I
C=  
f
=
Cob  
10  
1
0.01  
0.1  
1
10  
100  
EMITTER TO BASE VOLTAGE : VEB V)  
(
COLLECTOR TO BASE VOLTAGE : VCB V)  
(
Fig.7 Collector output capacitance  
vs. collector-base voltage  
Emitter input capacitance  
vs. emitter-base voltage  
Rev.A  
3/4  
QSL12  
Transistors  
Di2  
10  
1000m  
100m  
10m  
1m  
1
100m  
10m  
Ta=125°C  
C
°
25  
100µ  
10µ  
=
Ta=25°C  
Ta  
1m  
Ta=25°C  
1µ  
0.1m  
0.1µ  
0
0.1  
0.2  
0.3  
0.4  
0.5  
(V)  
0.6  
0
10  
20  
30  
40  
50  
60  
(V)  
70  
FORWARD VOLTAGE : V  
F
REVERSE VOLTAGE : V  
R
Fig.8 Forward characteristics  
Fig.9 Reverse characteristics  
Rev.A  
4/4  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  
厂商 型号 描述 页数 下载

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QSL10 通用晶体管(隔离的晶体管和二极管)[ General purpose transistor (isolated transistor and diode) ] 5 页

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QSL10TR [ Small Signal Bipolar Transistor, 1.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, TSMT5, 5 PIN ] 5 页

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QSL11 通用晶体管(隔离的晶体管和二极管)[ General purpose transistor (isolated transistor and diode) ] 5 页

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QSL11TR [ Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TSMT5, 5 PIN ] 5 页

ROHM

QSL12TR [ Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TSMT5, 5 PIN ] 5 页

ROHM

QSL9 通用晶体管(隔离的晶体管和二极管)[ General purpose transistor (isolated transistor and diode) ] 5 页

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