DXTA92
PNP SURFACE MOUNT TRANSISTOR
Features
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•
•
•
•
•
Epitaxial Planar Die Construction
Complementary NPN Type Available (DXTA42)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT89-3L
Mechanical Data
TOR
LLEC
2,4
CO
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•
Case: SOT89-3L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
3 E
2 C
1 B
C 4
T
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Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
1
ASE
B
3
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•
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Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
EW
VI
OP
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
Value
-300
-300
-5
Unit
V
VCBO
VCEO
VEBO
IC
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Continuous Collector Current
-500
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Symbol
PD
Rθ
Value
1
Unit
W
Thermal Resistance, Junction to Ambient (Note 3)
125
°C/W
°C
JA
Operating and Storage Temperature Range
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Conditions
C = -100μA, IE = 0
-300
-300
-5
V
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-0.25
-0.1
I
I
I
C = -1mA, IB = 0
E = -100μA, IC = 0
Collector-Base Cut-off Current
⎯
⎯
μA
V
CB = -200V, IE = 0
Emitter-Base Cut-off Current
IEBO
μA VEB = -3V, IC = 0A
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
-0.5
-0.9
V
V
VCE(SAT)
VBE(SAT)
⎯
⎯
⎯
⎯
I
I
C = -20mA, IB = -2mA
C = -20mA, IB = -2mA
IC = -1mA, VCE = -10V
IC = -10mA, VCE = -10V
IC = -30mA, VCE = -10V
⎯
⎯
⎯
⎯
⎯
⎯
25
40
25
Static Forward Current Transfer Ratio
V
hFE
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
IC = -10mA, VCE = -20V,
f = 100MHz
50
MHz
pF
fT
⎯
⎯
⎯
Output Capacitance
6
Cobo
⎯
VCB = -20V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31159 Rev. 4 - 2
1 of 4
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DXTA92
© Diodes Incorporated
