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PC80Q04N

型号:

PC80Q04N

描述:

肖特基二极管[ Schottky Barrier Diode ]

品牌:

NIEC[ NIHON INTER ELECTRONICS CORPORATION ]

页数:

2 页

PDF大小:

53 K

SBD MODULE 80A/40V  
PC80Q04N  
OUTLINE DRAWING  
FEATURES  
* Dual-Cathode Common to Base Plate  
* Low Forward Voltage Drop  
* Low Power Loss, High Efficiency  
* High Surge Capability  
* UL Recognized, File No. E187184  
TYPICAL APPLICATIONS  
* High Frequency Rectification  
Maximum Ratings  
Approx Net Weight:65g  
PC80Q04N  
Symbol  
Unit  
Voltage Rating  
Repetitive Peak Reverse Voltage  
Repetitive Peak Surge Reverse Voltage  
VRRM  
VRRSM  
40  
V
V
45 (Pulse Width ≤ 1 µsec, Duty 1/50)  
Electrical Rating  
Average Rectified Output Current  
RMS Forward Current  
Condition  
50Hz Half Sine Wave  
per Arm, Tc=96°C  
Rating  
IO  
80  
A
A
A
IF(RMS) Per Arm  
125  
50 Hz Half Sine Wave,1cycle  
Non-repetitive, per Arm  
Surge Forward Current  
IFSM  
1600  
Operating JunctionTemperature Range  
Storage Temperature Range  
Tjw  
Tstg  
-40 to +125  
-40 to +125  
1.45  
°C  
°C  
Case mounting(recommended)  
Terminal Screw(recommended)  
Mounting torque  
Ftor  
Nm  
1.45  
Electrical Thermal Characteristics  
Symbol  
Test Conditions  
Max. Unit  
Characteristics  
Peak Forward Voltage  
Peak Reverse Current  
VFM  
IRM  
IFM= 80A, Tj=25°C, per Arm  
VRM= VRRM, Tj= 25°C, per Arm  
0.52  
80  
V
mA  
Rth(j-c) Junction to Case, per Arm  
0.46  
Thermal Resistance  
°C/W  
Base Plate to Heat Sink with Thermal  
Rth(c-f)  
0.12  
Compound  
We recommend the use of the electrical conductive grease.  
In case of parallel use, consider in balance of the current of each arms.  
PC80Q04N OUTLINE DRAWING (Dimensions in mm)  
φ
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