SOT223 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 - FEBRUARY 1999
FZT491A
PARTMARKING DETAIL –
FZT491A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
40
Collector-Em itter Voltage
40
V
Em itter-Base Voltage
5
V
Peak Pulse Current
2
A
Continuous Collector Current
Base Current
IC
1
A
IB
200
2
m A
W
Power Dissipation at Tam b =25°C
Operating and Storage Tem perature Range
ELECTRICAL CHARACTERISTICS (at T
Ptot
Tj:Tstg
-55 to +150
°C
= 25°C).
am b
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
IC=100µA
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
40
40
5
V
V
IC=10m A*
IE=100µA
V
Collector Cut-Off
Current
100
nA
VCB=30V
Em itter Cut-Off Current
IEBO
100
100
nA
nA
VEB=4V
Collector-Em itter Cut-Off ICES
Current
VCES=30V
Collector-Em itter
Saturation Voltage
VCE(sat)
0.3
0.5
V
V
IC=500m A, IB =50m A*
IC=1A, IB =100m A*
Base-Em itter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
1.1
V
IC=1A, IB=100m A*
IC =1A, VCE =5V*
IC=1m A, VCE =5V
Base-Em itter Turn-On
Voltage
1.0
V
Static Forward Current
300
300
200
35
900
10
I
I
I
C =500m A, VCE =5V*
C =1A, VCE =5V*
C = 2A, VCE =5V*
Transition Frequency
Output Capacitance
fT
150
MHz
pF
IC=50m A, VCE=10V,
f =100MHz
Cobo
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs.
For typical characteristics graphs see FMMT491A datasheet
