SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
FZT549
ISSUE 2 MARCH 1995
✪
PARTMARKING DETAIL
FZT549
C
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-35
Collector-Emitter Voltage
-30
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
-1
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
= 25°C).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-35
-30
-5
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
-0.1
-10
VCB=-30V
µA
µA
VCB=-30V, Tamb=100°C
Emitter Cut-Off Current
IEBO
-0.1
VEB=-4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.50
-0.75
V
V
IC=-1A, IB =-100mA*
IC=-2A, IB -200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-1.25
V
IC=-1A, IB=-100mA*
Base-Emitter Turn-On
Voltage
-1.0
V
IC =-1A, VCE =-2V*
Static Forward Current
70
100
80
IC=-50mA, VCE =-2V
IC =-500mA, VCE =-2V*
IC =-1A, VCE =-2V*
IC =-2A, VCE =-2V*
300
10
30
Transition Frequency
Output Capacitance
fT
100
MHz
pF
IC=-100mA, VCE=-5V,
f =100MHz
Cobo
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT549 datasheet.
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