SOT223 PNP SILICON PLANAR MEDIUM POWER
HIGH PERFORMANCE TRANSISTOR
FZT589
ISSUE 2 - OCTOBER 1995
PARTMARKING DETAILS -
FZT589
C
COMPLEMENTARY TYPES - FZT489
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-50
Collector-Emitter Voltage
Emitter-Base Voltage
-30
V
-5
V
Peak Pulse Current
-2
A
Continuous Collector Current
Base Current
IC
-1
-200
A
IB
mA
W
°C
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
Ptot
2
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
-50
-30
-5
IC=-100µA
Collector-Emitter
Breakdown Voltage
V
V
IC=-1mΑ
Emitter-Base
Breakdown Voltage
IE=-100µA
Collector Cut-Off Current
Collector Emitter Cut-Off Current
Emitter Cut-Off Current
ICBO
-100
-100
-100
VCB=-30V
VCES=-30V
VEB=-4V
nA
nA
nA
V
ICES
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.35
-0.65
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-1.2
V
V
IC=-1A, IB=-100mA*
IC=-1A, VCE=-2V*
IC=-1mA, VCE=-2V*
IC=-500mA, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-2A, VCE=-2V*
Base-Emitter
Turn-On Voltage
-1.1
Static Forward
Current Transfer Ratio
100
100
80
300
15
40
Transition Frequency
Output Capacitance
fT
100
MHz
pF
IC=-100mA, VCE=-5V
f=100MHz
Cobo
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical characteristics graphs see FMMT549 datasheet
3 - 194
