SOT223 NPN SILICON PLANAR
FZT653
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1995
FEATURES
C
*
Low saturation voltage
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT753
FZT653
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
120
Collector-Emitter Voltage
100
V
Emitter-Base Voltage
5
V
Peak Pulse Current
6
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
2
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
= 25°C unless otherwise stated).
MAX. UNIT
V
amb
TYP.
PARAMETER
SYMBOL MIN.
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
120
100
5
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
V
V
IC=10mA*
Emitter-Base Breakdown V(BR)EBO
Voltage
IE=100µA
Collector Cut-Off Current ICBO
0.1
10
V
CB=100V
µA
µA
VCB=100V,T =100°C
Emitter Cut-Off Current
IEBO
0.1
VEB=4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
0.13
0.23
0.3
0.5
V
V
IC=1A, IB=100mA*
IC=2A, IB=200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
0.9
1.25
V
IC=1A, IB=100mA*
Base-Emitter
Turn-On Voltage
0.8
1.0
V
IC=1A, VCE =2V*
Static Forward Current
Transfer Ratio
70
100
55
200
200
110
55
IC=50mA, VCE=2V*
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
300
30
25
IC=2A, VCE=2V*
Transition Frequency
fT
140
175
MHz
IC=100mA, VCE =5V
f=100MHz
Output Capacitance
Switching Times
Cobo
ton
pF
ns
ns
VCB=10V, f=1MHz
80
IC=500mA, VCC =10V
IB1=IB2=50mA
toff
1200
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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