SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FZT689B
FEATURES
*
*
Gain of 400 at IC=2 Amps and low saturation voltage
C
Extremely low equivalent on-resistance; RCE(sat) 92mΩ at 3A
APPLICATIONS
*
*
Darlington replacement
E
Flash gun convertors and Battery powered circuits
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
FZT689B
FZT789B
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
Collector-Base Voltage
20
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
20
5
V
Peak Pulse Current
8
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
3
2
A
Ptot
W
°C
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
PARAMETER
Breakdown Voltage
Collector-Base
Collector-Emitter
V(BR)CBO
V(BR)CEO
20
20
V
V
IC=100µA
IC=10mA*
Emitter-Base
V(BR)EBO
ICBO
5
V
IE=100µA
Collector Cut-Off Current
Emitter Cut-Off Current
0.1
0.1
V
CB=16V
EB=4V
µA
µA
IEBO
V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.10
0.50
0.45
V
V
V
IC=0.1A, IB=0.5mA*
IC=2A, IB=10mA*
IC=3A, IB=20mA*
Base-EmitterSaturationVoltage VBE(sat)
0.9
0.9
V
V
IC=1A, IB=10mA*
IC=1A, VCE=2V*
Base-Emitter
Turn-On Voltage
VBE(on)
Static Forward
Current Transfer
Ratio
hFE
500
400
150
IC=0.1A, VCE=2V*
IC=2A, VCE=2V*
IC=6A, VCE=2V*
Transition Frequency
fT
150
MHz IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
200
16
pF
pF
VEB=0.5V, f=1MHz
VCB=10V, f=1MHz
Cobo
ton
toff
30
800
ns
ns
IC=500mA,IB1=50mA
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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