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FZT717TA

型号:

FZT717TA

描述:

SOT223 PNP中功率晶体管[ SOT223 PNP medium power transistor ]

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

6 页

PDF大小:

352 K

FZT717  
SOT223 PNP medium power transistor  
Summary  
BV  
= -12V; I = 3A  
C
CEO  
Description  
Packaged in the SOT223 outline this low saturation 12V PNP transistor  
offers extremely low on state losses making it ideal for use in DC-DC  
circuits and various driving and power management functions.  
Features  
C
E
2W power dissipation  
3A continuous current  
B
Excellent h characteristics up to 10A (pulsed)  
FE  
Low saturation voltage  
Applications  
Battery charging  
MOSFET and IGBT gate driving  
Motor drive  
E
C
B
C
Ordering information  
Device  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
Pinout - top view  
FZT717TA  
7
12  
1,000  
Device marking  
FZT717  
Issue 2 - September 2006  
© Zetex Semiconductors plc 2006  
1
www.zetex.com  
FZT717  
Absolute maximum ratings  
Parameter  
Symbol  
Limit  
Unit  
Collector-base voltage  
BV  
BV  
BV  
-12  
V
CBO  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
Peak pulse current  
-12  
-5  
V
V
I
-10  
-3  
A
CM  
(a)  
I
I
A
C
B
Continuous collector current  
Base current  
-500  
2
mA  
W
(a)  
P
D
Power dissipation at T  
Linear derating factor  
=25°C  
amb  
Operating and storage temperature range  
T , T  
-55 to +150  
°C  
j
stg  
Thermal resistance  
Parameter  
Symbol  
Limit  
Unit  
Junction to ambient  
R
62.5  
°C/W  
JA  
NOTES:  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper in still air  
conditions.  
Issue 2 - September 2006  
© Zetex Semiconductors plc 2006  
2
www.zetex.com  
FZT717  
Typical characteristics  
Issue 2 - September 2006  
© Zetex Semiconductors plc 2006  
3
www.zetex.com  
FZT717  
Electrical characteristics (at T  
= 25°C unless otherwise stated)  
amb  
Parameter  
Symbol Min.  
Typ. Max. Unit Conditions  
Collector-base breakdown  
voltage  
BV  
-12  
-12  
-5  
V
V
V
I = 100µA  
C
CBO  
CEO  
EBO  
Collector-emitter breakdown BV  
voltage  
I = 10mA  
C
Emitter-base breakdown  
voltage  
BV  
I = 100µA  
E
Collector cut-off current  
Emitter cut-off current  
I
I
-100  
-100  
-20  
nA  
nA  
V
V
= -10V  
= -4V  
CBO  
CB  
EB  
EBO  
(*)  
Collector-emitter saturation  
voltage  
V
mV  
CE(sat)  
I =-0.1A, I =-10mA  
C B  
(*)  
(*)  
(*)  
-150  
-320  
I =-1A, I =-10mA  
C
B
I =-3A, I =-50mA  
C
B
Base-emitter saturation  
voltage  
V
V
-1050  
mV  
mV  
BE(sat)  
I =-3A, I =-50mA  
C
B
(*)  
Base-emitter turn-on voltage  
-1000  
BE(on)  
FE  
I =-3A, V =-2V  
C
CE  
(*)  
Static forward current transfer h  
ratio  
300  
300  
160  
60  
I =-10mA, V =-2V  
C
CE  
(*)  
I =-100mA, V =-2V  
C
CE  
(*)  
I =-3A, V =-2V  
C
CE  
(*)  
I =-8A, V =-2V  
C
CE  
(*)  
45  
I =-10A, V =-2V  
C
CE  
Transition frequency  
f
80  
110  
MHz I =-50mA, V =-10V  
T
C
CE  
f = 100MHz  
Output capacitance  
Switching times  
C
21  
70  
30  
pF  
ns  
ns  
V
V
=-10V, f = 1MHz  
OBO  
CB  
CC  
t
t
=-6V, I =-2A  
C
on  
off  
130  
I
= I =50mA  
B1 B2  
NOTES:  
(*) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%  
Issue 2 - September 2006  
© Zetex Semiconductors plc 2006  
4
www.zetex.com  
FZT717  
Typical characteristics  
Issue 2 - September 2006  
© Zetex Semiconductors plc 2006  
5
www.zetex.com  
FZT717  
Package outline - SOT223  
DIM  
Millimeters  
Min Max  
Inches  
Min  
DIM  
Millimeters  
Min Max  
Inches  
Max  
0.071  
0.004  
0.033  
0.122  
0.013  
0.264  
Min  
0.0905 BSC  
0.181 BSC  
Max  
A
A1  
b
-
1.80  
0.10  
0.84  
3.10  
0.33  
6.70  
-
e
e1  
E
2.30 BSC  
4.60 BSC  
0.02  
0.66  
2.90  
0.23  
6.30  
0.0008  
0.026  
0.114  
0.009  
0.248  
6.70  
7.30  
0.264  
0.287  
b2  
C
E1  
L
3.30  
0.90  
-
3.70  
0.130  
0.355  
-
0.146  
-
-
-
-
D
-
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  
Europe  
Americas  
Asia Pacific  
Corporate Headquarters  
Zetex GmbH  
Kustermann-park  
Balanstraße 59  
D-81541 München  
Germany  
Zetex Inc  
Zetex (Asia Ltd)  
Zetex Semiconductors plc  
Zetex Technology Park, Chadderton  
Oldham, OL9 9LL  
700 Veterans Memorial Highway  
Hauppauge, NY 11788  
USA  
3701-04 Metroplaza Tower 1  
Hing Fong Road, Kwai Fong  
Hong Kong  
United Kingdom  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (1) 631 360 2222  
Fax: (1) 631 360 8222  
usa.sales@zetex.com  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Telephone: (44) 161 622 4444  
Fax: (44) 161 622 4446  
hq@zetex.com  
For international sales offices visit www.zetex.com/offices  
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork  
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or  
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.  
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
Issue 2 - September 2006  
© Zetex Semiconductors plc 2006  
6
www.zetex.com  
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