SOT223 PNP SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 2 FEBRUARY 1995
FZT758
FEATURES
C
*
*
*
400 Volt VCEO
0.5 Amp continuous current
Low saturation voltage
E
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT658
FZT758
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-400
Collector-Emitter Voltage
Emitter-Base Voltage
-400
V
-5
V
Peak Pulse Current
-1
-500
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
mA
W
°C
Ptot
2
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
SYMBOL MIN.
V(BR)CBO -400
PARAMETER
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter
Breakdown Voltage
VCEO(SUS) -400
Emitter-Base Breakdown
Voltage
V(BR)EBO
-5
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
-100
-100
-100
nA
nA
nA
VCB=-320V
VCE=-320V
VEB=-4V
ICES
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.30
-0.25
-0.50
V
V
V
IC=-20mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-100mA, IB=-10mA*
Base-Emitter Saturation
Voltage
VBE(sat)
-0.9
V
IC=-100mA, IB=-10mA*
Base-Emitter Turn On Voltage
VBE(on)
hFE
-1.0
V
IC=-100mA, VCE=-5V*
Static Forward Current
Transfer Ratio
50
50
40
IC=-1mA, VCE=-5V
IC=-100mA, VCE=-5V*
IC=-200mA, VCE=-10V*
Transition Frequency
fT
50
MHz
pF
IC=-20mA, VCE=-20V
f=20MHz
Output Capacitance
Switching times
Cobo
20
VCB=-20V, f=1MHz
ton
toff
140 Typical ns
2000 Typical ns
IC=-100mA, VCC=-100V
IB1=10mA, IB2=-20mA
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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