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IXUC60N10

型号:

IXUC60N10

描述:

沟槽功率MOSFET ISOPLUS220 -TM[ Trench Power MOSFET ISOPLUS220-TM ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

60 K

ADVANCE TECHNICAL INFORMATION  
Trench Power MOSFET  
ISOPLUS220TM  
IXUC 60N10  
V
I
= 100 V  
= 60 A  
= 16.4 mΩ  
DSS  
D25  
Electrically Isolated Back Surface  
R
DS(on)  
ISOPLUS 220TM  
Symbol  
Test Conditions  
Maximum Ratings  
G
D
S
VDSS  
VGS  
TJ = 25°C to 150°C  
100  
V
V
Continuous  
±20  
Isolated back surface*  
D = Drain,  
ID25  
ID90  
IS25  
IS90  
ID(RMS)  
EAS  
TC = 25°C; Note 1  
TC = 90°C, Note 1  
60  
45  
A
A
G = Gate,  
S = Source  
* Patent pending  
TC = 25°C; Note 1, 2  
TC = 90°C, Note 1, 2  
60  
45  
A
A
Package lead current limit  
TC = 25°C  
45  
tlb  
A
mJ  
W
Features  
l Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
l Trench MOSFET  
- very low RDS(on)  
- fast switching  
- usable intrinsic reverse diode  
l Low drain to tab capacitance(<15pF)  
l Unclamped Inductive Switching (UIS)  
rated  
PD  
TC = 25°C  
150  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
RMS leads-to-tab, 50/60 Hz, t = 1 minute  
Mounting force  
300  
°C  
VISOL  
FC  
2500  
V~  
11 ... 65 / 2.4 ...11 N/lb  
Weight  
2
g
Applications  
l Automotive 42V systems  
- electronic switches to replace relays  
and fuses  
- choppers to replace series dropping  
resistors used for motors, heaters, etc.  
- inverters for AC drives, e.g. starter  
generator  
Symbol  
RDS(on)  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
- DC-DC converters, e.g. 12V to 42V, etc.  
l Power supplies  
- DC - DC converters  
min. typ. max.  
- Solar inverters  
VGS = 10 V, ID = 45 A, Note 3  
VGS = 10 V, ID = ID90, TJ = 125°C Note 3  
12.8 16.4 mΩ  
l Battery powered systems  
- choppers or inverters for motor control  
in hand tools  
33  
mΩ  
- battery chargers  
VGS(th)  
IDSS  
VDS = VGS, ID = 1 mA  
2
4
V
Advantages  
l Easy assembly: no screws or isolation  
foils required  
l Space savings  
l High power density  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
10 µA  
mA  
0.2  
IGSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
98900 (2/02)  
© 2002 IXYS All rights reserved  
IXUC 60N10  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS220 OUTLINE  
Qg(on)  
Qgs  
110  
18  
nC  
nC  
nC  
VGS = 10 V, VDS = 80 V, ID = 25 A  
Qgd  
94  
td(on)  
tr  
td(off)  
tf  
35  
85  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 40 A  
ID = 90 A, RG = 4.7 Ω  
150  
70  
RthJC  
RthCH  
1
K/W  
K/W  
0.30  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
VSD  
Test Conditions  
IF = 30 A, VGS = 0 V  
Note 3  
0.8  
80  
1.3  
V
trr  
IF = 75 A, di/dt = -200 A/µs, VDS = 30 V  
ns  
Note: 1. MOSFET chip capability  
2. Intrinsic diode capability  
Note: All terminals are solder plated.  
1 - Gate  
2 - Drain  
3 - Source  
3. Pulse test, t 300 µs, duty cycle d 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
厂商 型号 描述 页数 下载

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IXYS

IXUC120N10 沟槽功率MOSFET ISOPLUS220[ Trench Power MOSFET ISOPLUS220 ] 2 页

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IXUC160N075 沟槽功率MOSFET[ Trench Power MOSFET ] 2 页

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IXUC200N055 沟槽功率MOSFET ISOPLUS220[ Trench Power MOSFET ISOPLUS220 ] 2 页

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IXUN280N10 [ Power Field-Effect Transistor, 280A I(D), 100V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 ] 2 页

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IXUN350N10 [ Power Field-Effect Transistor, 350A I(D), 100V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 ] 5 页

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