请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXXK100N60B3H1

型号：

IXXK100N60B3H1

描述：

极端的光透过， IGBT为10-30kHz切换[ Extreme Light Punch Through IGBT for 10-30kHz Switching ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

233 K

下载PDF手册
Advance Technical Information  
XPTTM 600V  
IXXK100N60B3H1  
VCES = 600V  
IC90 = 100A  
VCE(sat) ≤ 1.80V  
tfi(typ) = 150ns  
GenX3TM w/ Diode  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
TO-264  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
Tab  
IC25  
ILRMS  
IC90  
TC= 25°C ( Chip Capability )  
Terminal Current Limit  
TC = 90°C  
190  
120  
100  
65  
A
A
A
A
G = Gate  
E
= Emitter  
C = Collector  
Tab = Collector  
IF110  
TC = 110°C  
ICM  
TC = 25°C, 1ms  
370  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
50  
A
600  
mJ  
Features  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 200  
A
μs  
W
z Optimized for 10-30kHz Switching  
(RBSOA)  
@VCE ≤ VCES  
z
Square RBSOA  
Avalanche Rated  
Short Circuit Capability  
Anti-Parallel Ultra Fast Diode  
High Current Handling Capability  
International Standard Package  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
10  
z
z
(SCSOA)  
RG = 10Ω, Non Repetitive  
z
PC  
TC = 25°C  
695  
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z
-55 ... +150  
Advantages  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
High Power Density  
Low Gate Drive Requirement  
z
Md  
Mounting Torque  
1.13/10  
10  
Nm/lb.in.  
g
Weight  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z
z
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
5.5  
z
z
50 μA  
4 mA  
z
TJ = 125°C  
TJ = 150°C  
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 70A, VGE = 15V, Note 1  
1.50  
1.77  
1.80  
V
V
© 2010 IXYS CORPORATION, All Rights Reserved  
DS100285(12/10)  
IXXK100N60B3H1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 (IXXK) Outline  
Min.  
Typ.  
Max.  
gfs  
Cie  
Coes  
Cres  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
22  
40  
S
4860  
475  
83  
pF  
pF  
pF  
s
Qg  
143  
37  
nC  
nC  
nC  
Qge  
Qgc  
IC = 70A, VGE = 15V, VCE = 0.5 • VCES  
60  
td(on)  
tri  
Eon  
td(off)  
tfi  
30  
70  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 70A, VGE = 15V  
1.9  
120  
150  
2.0  
mJ  
ns  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
VCE = 360V, RG = 2Ω  
3
=
ns  
Note 2  
Eof  
2.8  
mJ  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
32  
60  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 70A, VGE = 15V  
2.3  
150  
200  
2.8  
mJ  
ns  
VCE = 360V, RG = 2Ω  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
0.15  
Reverse Diode (FRED)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 60A, VGE = 0V, Note 1  
1.6  
1.4  
2.0  
1.8  
V
V
TJ = 150°C  
TJ = 100°C  
IRM  
trr  
8.3  
A
IF = 60A, VGE = 0V,  
-diF/dt = 200A/μs, VR = 300V  
140  
ns  
RthJC  
0.30 °C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463 6,771,478 B2 7,071,537  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
IXXK100N60B3H1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
140  
120  
100  
80  
VGE = 15V  
14V  
VGE = 15V  
13V  
12V  
13V  
11V  
12V  
10V  
9V  
11V  
60  
10V  
9V  
40  
8V  
20  
8V  
7V  
7V  
6V  
0
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.5  
15  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
140  
120  
100  
80  
VGE = 15V  
13V  
VGE = 15V  
11V  
I C = 140A  
12V  
10V  
I C = 70A  
60  
9V  
8V  
40  
20  
I C = 35A  
7V  
5V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
180  
160  
140  
120  
100  
80  
TJ = 25ºC  
TJ = 150ºC  
25ºC  
I C = 140A  
- 40ºC  
60  
70A  
40  
20  
35A  
0
8
9
10  
11  
12  
13  
14  
4
5
6
7
8
9
10  
11  
VGE - Volts  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXXK100N60B3H1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 70A  
I G = 10mA  
25ºC  
150ºC  
6
4
2
0
0
0
1
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
20  
40  
60  
80  
100  
120  
140  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
220  
200  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
60  
TJ = 150ºC  
RG = 2  
C
res  
40  
Ω
= 1 MHz  
5
dv / dt < 10V / ns  
f
20  
0
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
1000  
100  
10  
1
VCE(sat) Limit  
0.1  
External Lead Limit  
25µs  
100µs  
1ms  
0.01  
1
TJ = 150ºC  
10ms  
TC = 25ºC  
DC  
Single Pulse  
0.001  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - Second  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXK100N60B3H1  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
5
4
3
2
1
0
5
4
3
2
1
0
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
7
6
5
4
3
2
1
E
E
on - - - -  
VGE = 15V  
E
E
on - - - -  
off  
RG = 2  
off  
Ω ,  
CE = 360V  
TJ = 150ºC , VGE = 15V  
VCE = 360V  
V
TJ = 150ºC  
I C = 100A  
TJ = 25ºC  
I C = 50A  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
340  
300  
260  
220  
180  
140  
100  
340  
300  
260  
220  
180  
140  
100  
5
4
3
2
1
0
5
4
3
2
1
0
t f i  
t
d(off) - - - -  
E
E
on - - - -  
off  
TJ = 150ºC, GE = 15V  
V
RG = 2  
VGE = 15V  
Ω ,  
CE = 360V  
V
VCE = 360V  
I C = 50A  
I C = 100A  
I C = 50A  
I C = 100A  
2
3
4
5
6
7
8
9
10  
11 12  
13 14  
15  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
240  
220  
200  
180  
160  
140  
120  
100  
80  
400  
350  
300  
250  
200  
150  
100  
50  
320  
280  
240  
200  
160  
120  
80  
tf i  
t
d(on) - - - -  
t f i  
td(off)  
- - - -  
RG = 2  
, VGE = 15V  
Ω
RG = 2  
,
VGE = 15V  
Ω
VCE = 360V  
VCE = 360V  
I C = 100A  
TJ = 150ºC  
I C = 50A  
TJ = 25ºC  
40  
60  
20  
30  
40  
50  
60  
IC - Amperes  
70  
80  
90  
100  
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXXK100N60B3H1  
Fig. 20. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
140  
120  
100  
80  
38  
36  
34  
32  
30  
28  
26  
24  
180  
160  
140  
120  
100  
80  
84  
76  
68  
60  
52  
44  
36  
28  
20  
t r i  
td(on) - - - -  
t r i  
td(on) - - - -  
RG = 2  
, VGE = 15V  
Ω
TJ = 150ºC, VGE = 15V  
VCE = 360V  
VCE = 360V  
I C = 100A  
TJ = 150ºC, 25ºC  
60  
I C = 50A  
40  
60  
20  
40  
0
20  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
RG - Ohms  
IC - Amperes  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
37  
tr i  
td(on) - - - -  
, VGE = 15V  
160  
140  
120  
100  
80  
36  
35  
34  
33  
32  
31  
30  
29  
28  
RG = 2  
Ω
VCE = 360V  
I C = 100A  
60  
I C = 50A  
40  
20  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXK100N60B3H1  
Fig. 23. Reverse Recovery Charge Qr  
Versus -diF/dt  
Fig. 24. Peak Reverse Current IRM  
Versus -diF/dt  
Fig. 22. Forward Current IF Versus VF  
Fig. 25. Dynamic Parameters Qr, IRM  
Versus TVJ  
Fig. 26. Recovery Time trr Versus  
-diF/dt  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width [
Seconds  
27.  
Fig. Maximum transient thermal impedance junction to case (for diode)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXX_100N60B3(7D)9-30-10-A  
厂商 型号 描述 页数 下载

IXYS

 		IXXA50N60B3 [ Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, TO-263AA, TO-263AA, 3 PIN ] 6 页

MMD

 		IXXAA1 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXAA3 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXAB1 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXAB3 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXBA1 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXBA3 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXBB1 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXBB3 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

MMD

 		IXXCA1 6.0毫米×3.5 mm 2的垫陶瓷封装[ 6.0mm x 3.5 mm 2 Pads Ceramic Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.193369s