请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXYH82N120C3

型号：

IXYH82N120C3

描述：

1200V IGBT XPT GenX3[ 1200V XPT IGBT GenX3 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

166 K

下载PDF手册
Advance Technical Information  
1200V XPTTM IGBT  
GenX3TM  
VCES = 1200V  
IC110 = 82A  
VCE(sat) ≤ 3.2V  
tfi(typ) = 93ns  
IXYH82N120C3  
High-Speed IGBT  
for 20-50 kHz Switching  
TO-247 AD  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
Tab  
=
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
160  
82  
A
A
G = Gate  
E = Emitter  
C
Collector  
Tab = Collector  
TC = 25°C, 1ms  
320  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
41  
A
800  
mJ  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 164  
A
Features  
(RBSOA)  
@VCE ≤ VCES  
z
Optimized for Low Switching Losses  
Square RBSOA  
Positive Thermal Coefficient of  
Vce(sat)  
Avalanche Rated  
High Current Handling Capability  
International Standard Package  
PC  
TC = 25°C  
1040  
W
z
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z
z
z
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Advantages  
Weight  
z
High Power Density  
z
Low Gate Drive Requirement  
Applications  
z
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
2.5  
Typ.  
Max.  
z
z
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
4.5  
z
z
25 μA  
TJ = 125°C  
TJ = 125°C  
250 μA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 82A, VGE = 15V, Note 1  
2.75  
3.50  
3.20  
V
V
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100335(05/11)  
IXYH82N120C3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXYH) Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
30  
50  
S
Cies  
Coes  
Cres  
4060  
285  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
∅ P  
1
2
3
110  
Qg(on)  
Qge  
Qgc  
215  
26  
nC  
nC  
nC  
IC = 75A, VGE = 15V, VCE = 0.5 • VCES  
84  
td(on)  
tri  
Eon  
td(off)  
tfi  
29  
78  
ns  
ns  
mJ  
ns  
ns  
e
Inductive load, TJ = 25°C  
IC = 80A, VGE = 15V  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
4.95  
192  
93  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
280  
VCE = 0.5 • VCES, RG = 2Ω  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note 2  
Eof  
2.78  
5.00 mJ  
f
td(on)  
tri  
29  
90  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive load, TJ = 125°C  
IC = 80A, VGE = 15V  
Eon  
td(off)  
tfi  
7.45  
200  
95  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
VCE = 0.5 • VCES, RG = 2Ω  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
3.70  
mJ  
∅P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYH82N120C3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
VGE = 15V  
11V  
VGE = 15V  
160  
140  
120  
100  
80  
13V  
10V  
12V  
13V  
11V  
10V  
9V  
9V  
8V  
7V  
8V  
60  
7V  
6V  
5V  
40  
6V  
5V  
20  
0
0
0
0
5
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
6.5  
15  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
160  
140  
120  
100  
80  
VGE = 15V  
VGE = 15V  
13V  
11V  
10V  
9V  
I C = 164A  
I C = 82A  
I C = 41A  
8V  
7V  
60  
40  
6V  
5V  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
160  
140  
120  
100  
80  
8.5  
7.5  
6.5  
5.5  
4.5  
3.5  
2.5  
1.5  
TJ = 25ºC  
I C = 164A  
60  
TJ = 125ºC  
82A  
40  
25ºC  
- 40ºC  
20  
41A  
0
6
7
8
9
10  
11  
12  
13  
14  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYH82N120C3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I C = 82A  
I G = 10mA  
25ºC  
125ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
C
oes  
60  
res  
TJ = 125ºC  
RG = 2  
40  
Ω
20  
dv / dt < 10V / ns  
= 1 MHz  
5
f
0
10  
200  
300  
400  
500  
600  
700  
800  
900  
1000 1100 1200  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYH82N120C3  
Fig. 13. Inductive Switching Energy Loss vs.  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
5
4.5  
4
10  
8
7
6
5
4
3
2
1
0
16  
14  
12  
10  
8
E
E
on - - - -  
VGE = 15V  
E
E
on - - - -  
off  
9
8
7
6
5
4
3
2
1
off  
RG = 2  
Ω ,  
TJ = 125ºC , VGE = 15V  
VCE = 600V  
VCE = 600V  
3.5  
3
I C = 80A  
TJ = 125ºC  
2.5  
2
6
TJ = 25ºC  
4
1.5  
1
I C = 40A  
2
0.5  
0
40  
50  
60  
70  
IC - Amperes  
80  
90  
100  
2
4
6
8
10  
12  
14  
16  
18  
RG - Ohms  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
200  
180  
160  
140  
120  
100  
80  
780  
700  
620  
540  
460  
380  
300  
220  
140  
4.5  
4
9
8
7
6
5
4
3
2
1
E
E
on - - - -  
t f i  
t
d(off) - - - -  
off  
RG = 2  
VGE = 15V  
TJ = 125ºC, VGE = 15V  
Ω ,  
VCE = 600V  
VCE = 600V  
3.5  
3
I C = 80A  
I C = 40A  
2.5  
2
I C = 40A  
1.5  
1
I C = 80A  
60  
0.5  
40  
25  
50  
75  
TJ - Degrees Centigrade  
100  
125  
2
4
6
8
10  
12  
14  
16  
18  
RG - Ohms  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
240  
200  
160  
120  
80  
280  
260  
240  
220  
200  
180  
160  
280  
240  
200  
160  
120  
80  
240  
tf i  
td(on)  
- - - -  
t f i  
td(off)  
- - - -  
230  
220  
210  
200  
190  
180  
170  
RG = 2  
, VGE = 15V  
Ω
RG = 2  
,
VGE = 15V  
Ω
VCE = 600V  
VCE = 600V  
I C = 40A  
I C = 80A  
TJ = 125ºC  
TJ = 25ºC  
40  
40  
0
0
25  
50  
75  
TJ - Degrees Centigrade  
100  
125  
40  
50  
60  
70  
IC - Amperes  
80  
90  
100  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYH82N120C3  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
140  
120  
100  
80  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
60  
55  
50  
45  
40  
35  
30  
25  
20  
tr i  
td(on) - - - -  
t r i  
td(on) - - - -  
RG = 2  
, VGE = 15V  
Ω
TJ = 125ºC, VGE = 15V  
VCE = 600V  
VCE = 600V  
TJ = 125ºC  
I C = 80A  
TJ = 25ºC  
60  
60  
40  
I C = 40A  
40  
20  
20  
0
40  
50  
60  
70  
80  
90  
100  
2
4
6
8
10  
12  
14  
16  
18  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
140  
120  
100  
80  
36  
34  
32  
30  
28  
26  
24  
22  
t r i  
td(on) - - - -  
RG = 2  
, VGE = 15V  
Ω
VCE = 600V  
I C = 80A  
60  
40  
I C = 40A  
20  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_82N120C3(8M)05-10-11  
厂商 型号 描述 页数 下载

IXYS

 		IXYA15N65C3D1 [ Preliminary Technical Information ] 6 页

IXYS

 		IXYA20N65B3 [ Advance Technical Information ] 6 页

IXYS

 		IXYA20N65C3D1 [ XPTTM 650V IGBT ] 7 页

LITTELFUSE

 		IXYA50N65C3 [ Insulated Gate Bipolar Transistor, ] 7 页

IXYS

 		IXYA50N65C3-TRL [ Insulated Gate Bipolar Transistor, ] 6 页

IXYS

 		IXYA8N90C3D1 [ 900V XPTTM IGBT ] 7 页

IXYS

 		IXYB82N120C3H1 [ Insulated Gate Bipolar Transistor, 160A I(C), 1200V V(BR)CES, N-Channel, PLUS264, 3 PIN ] 7 页

LITTELFUSE

 		IXYF30N170CV1 [ Insulated Gate Bipolar Transistor, ] 8 页

IXYS

 		IXYF30N450 [ Insulated Gate Bipolar Transistor, ] 4 页

LITTELFUSE

 		IXYF30N450 [ Insulated Gate Bipolar Transistor, ] 5 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.228956s