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IXFA12N50P

型号：

IXFA12N50P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiperFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

144 K

下载PDF手册
PolarTM Power MOSFET  
HiperFETTM  
IXFA12N50P  
IXFP12N50P  
VDSS = 500V  
ID25 = 12A  
RDS(on) ≤ 500mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXFA)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
500  
500  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
G
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
(TAB)  
ID25  
IDM  
TC = 25°C  
12  
30  
A
A
TO-220 (IXFP)  
TC = 25°C, pulse width limited by TJM  
IA  
EAS  
TC = 25°C  
TC = 25°C  
12  
600  
A
mJ  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
(TAB)  
G
D
S
200  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
D
= Drain  
S = Source  
TAB = Drain  
TL  
1.6mm (0.062) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Features  
TSOLD  
Md  
Mounting torque  
(TO-220)  
1.13 / 10  
Nm/lb.in.  
z International standard packages  
z Unclamped Inductive Switching  
(UIS) rated  
z Low package inductance  
- easy to drive and to protect  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ±30V, VDS = 0V  
500  
V
V
3.0  
5.5  
±100 nA  
μA  
IDSS  
VDS = VDSS  
VGS = 0V  
5
TJ = 125°C  
250 μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
500 mΩ  
DS99436F(04/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFA12N50P  
IXFP12N50P  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-220 (IXFP) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
7.5  
13  
S
Ciss  
Coss  
Crss  
1830  
182  
16  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 50Ω (External)  
22  
ns  
27  
65  
20  
ns  
ns  
ns  
Qg(on)  
Qgs  
Qgd  
29  
11  
10  
nC  
nC  
nC  
Pins: 1 - Gate  
2 - Drain  
VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RthJC  
RthCS  
0.62 °C/W  
°C/W  
(TO-220)  
0.50  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0V  
12 A  
ISM  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
48 A  
VSD  
1.5 V  
trr  
QRM  
IRM  
300 ns  
TO-263 (IXFA) Outline  
IF = 6A, -di/dt = 150A/μs,  
VR = 100V, VGS = 0V  
2.8  
18.2  
μC  
A
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
IXFA12N50P  
IXFP12N50P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
º
@ 25 C  
º
12  
10  
8
30  
27  
24  
21  
18  
15  
12  
9
V
GS  
= 10V  
V
= 10V  
GS  
8V  
7V  
6
7V  
4
6
2
6V  
6V  
4
3
0
0
0
1
2
3
5
6
7
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
V
- Volts  
D S  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on) Normalized to ID = 6A Value  
vs. Junction Temperature  
@ 125 C  
º
12  
10  
8
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10V  
7V  
GS  
V
=10V  
GS  
I = 12A  
D
6
I = 6A  
D
6V  
4
2
5V  
8
0
0
2
4
6
VD S - Volts  
10  
12  
-50 -25  
0
25  
TJ - Degrees Centigrade  
50  
75  
100 125 150  
Fig. 5. RDS(on) Normalized to ID = 6A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Temperature  
14  
12  
10  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 10V  
GS  
T = 125 C  
º
J
6
T = 25 C  
º
J
4
2
0
0
3
6
9
12 15 18 21 24 27 30  
I D - Amperes  
-50 -25  
0
25  
50  
TC - Degrees Centigrade  
75  
100 125 150  
© 2008 IXYS CORPORATION, All rights reserved  
IXFA12N50P  
IXFP12N50P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
20  
18  
16  
14  
12  
10  
8
27  
24  
21  
18  
15  
12  
9
T = - 40 C  
º
J
25 C  
º
125 C  
º
T = 125 C  
º
25ºC  
- 40ºC  
J
6
6
4
3
2
0
0
0
2
4
6
8
10 12 14 16 18 20  
4.5  
5.0  
5.5 6.0  
VG S - Volts  
6.5  
7.0  
7.5  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-Drain  
Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
35  
30  
25  
20  
15  
10  
5
V
= 250V  
DS  
I = 6A  
D
I
G
= 10mA  
T = 125 C  
º
J
T = 25 C  
º
J
0
0
3
6
9
12 15 18 21 24 27 30  
0.4  
0.5  
0.6 0.7  
VS D - Volts  
0.8  
0.9  
1.0  
Q G - nanoCoulombs  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
100  
10  
1
f= 1M Hz  
T = 150ºC  
J
C
R
Limit  
iss  
DS(on)  
T = 25ºC  
C
C
25µs  
oss  
100µs  
1ms  
C
rss  
DC  
10ms  
10  
0
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFA12N50P  
IXFP12N50P  
Fig. 13. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.01  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_12N50P(4J)4-14-08-D  
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