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IXFA180N10T2

型号：

IXFA180N10T2

描述：

TrenchT2 HiperFET功率MOSFET[ TrenchT2 HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

207 K

下载PDF手册
Preliminary Technical Information  
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 100V  
ID25 = 180A  
RDS(on) ≤ 6mΩ  
IXFA180N10T2  
IXFP180N10T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXFA)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
TO-220AB (IXFP)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
TC = 25°C, Pulse Width Limited by TJM  
180  
120  
450  
A
A
A
G
D
D (Tab)  
= Drain  
S
IA  
TC = 25°C  
TC = 25°C  
90  
A
G = Gate  
D
S = Source  
Tab = Drain  
EAS  
750  
mJ  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
15  
V/ns  
W
480  
Features  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
z International Standard Packages  
z Avalanche Rated  
TJM  
Tstg  
-55 ... +175  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Fast Intrinsic Rectifier  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
z
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Low RDS(on)  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
100  
2.0  
V
V
z DC-DC Converters  
z Battery Chargers  
4.0  
z Switch-Mode and Resonant-Mode  
Power Supplies  
±100 nA  
IDSS  
10 μA  
z DC Choppers  
z AC Motor Drives  
TJ = 150°C  
VGS = 10V, ID = 50A, Notes 1, 2  
750 μA  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
RDS(on)  
6 mΩ  
DS100266A(09/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFA180N10T2  
IXFP180N10T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
50  
88  
S
Ciss  
Coss  
Crss  
10.5  
945  
100  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
21  
37  
34  
13  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2Ω (External)  
Qg(on)  
Qgs  
185  
48  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
52  
RthJC  
RthCH  
0.31 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
180  
720  
1.3  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
TO-220 Outline  
trr  
66  
5.8  
ns  
A
IF = 0.5 • ID25, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 0.5 • VDSS  
190  
nC  
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. On through-hole package, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFA180N10T2  
IXFP180N10T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
VGS = 15V  
10V  
10V  
9V  
8V  
8V  
7V  
6V  
7V  
6V  
5V  
60  
40  
20  
5V  
0
0
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
1
2
3
4
5
6
7
8
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 90A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
180  
160  
140  
120  
100  
80  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 15V  
10V  
VGS = 10V  
9V  
8V  
7V  
I D = 180A  
6V  
I D = 90A  
60  
40  
5V  
20  
0
0.5  
1
1.5  
2
2.5  
3
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 90A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
140  
120  
100  
80  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
External Lead Current Limit  
VGS = 10V  
15V - - - - -  
TJ = 175ºC  
60  
40  
TJ = 25ºC  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
40  
80  
120  
160  
200  
240  
280  
320  
360  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFA180N10T2  
IXFP180N10T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
150ºC  
25ºC  
- 40ºC  
60  
60  
40  
40  
20  
20  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 50V  
I
D = 90A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
25µs  
100µs  
= 1 MHz  
f
RDS(on) Limit  
1ms  
10ms  
C
iss  
100ms  
C
oss  
DC  
TC = 175ºC  
C
rss  
T J = 25ºC  
Single Pulse  
1
10  
1
10  
VDS - Volts  
100  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA180N10T2  
IXFP180N10T2  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
RG = 2Ω , VGS = 10V  
RG = 2ꢀ , VGS = 10V  
DS = 50V  
VDS = 50V  
V
TJ = 25ºC  
I D = 90A  
I D = 45A  
TJ = 125ºC  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
90  
100  
110  
120  
130  
140  
150  
160  
170  
180  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
20  
26  
25  
24  
23  
22  
21  
20  
19  
19  
46  
44  
42  
40  
38  
36  
34  
32  
30  
28  
t r  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
td(on) - - - - -  
18  
17  
16  
15  
14  
13  
12  
11  
10  
tf  
RG = 2ꢀ, VGS = 10V  
DS = 50V  
td(off) - - - - -  
19  
18  
17  
16  
15  
14  
13  
V
I D = 90A  
I D = 90A, 180A  
I D = 180A  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
17  
16  
15  
14  
13  
12  
11  
50  
46  
42  
38  
34  
30  
26  
17  
16  
15  
14  
13  
12  
46  
44  
42  
40  
38  
36  
tf  
td(off) - - - - -  
tf  
td(off) - - - - -  
TJ = 125ºC, VGS = 10V  
VDS = 50V  
RG = 2ꢀ, VGS = 10V  
VDS = 50V  
TJ = 125ºC  
TJ = 25ºC  
I D = 180A, 90A  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
90  
100  
110  
120  
130  
140  
150  
160  
170  
180  
ID - Amperes  
RG - Ohms  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFA180N10T2  
IXFP180N10T2  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXF_180N10T2 (6V)01-02-09  
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