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IXFB120N50P2

型号：

IXFB120N50P2

描述：

PolarP2 HiPerFET功率MOSFET[ PolarP2 HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

141 K

下载PDF手册
Preliminary Technical Information  
PolarP2TM HiPerFETTM  
Power MOSFET  
VDSS = 500V  
ID25 = 120A  
IXFB120N50P2  
RDS(on) ≤ 43mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
trr  
≤ 300ns  
Fast Intrinsic Diode  
PLUS264TM  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
500  
500  
V
V
V
V
G
D
S
VDGR  
VGSS  
VGSM  
TJ = 25°C to 150°C, RGS = 1MΩ  
Continuous  
Tab  
± 30  
± 40  
Transient  
G = Gate  
D
= Drain  
S
= Source  
Tab = Drain  
ID25  
IDM  
TC = 25°C  
120  
300  
A
A
TC = 25°C, Pulse Width Limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
120  
4
A
J
EAS  
Features  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
1890  
V/ns  
W
z High Current Handling Capability  
z Fast Intrinsic Diode  
z Avalanche Rated  
TJ  
-55 ... +150  
150  
°C  
z Low RDS(ON)  
TJM  
°C  
z Low Package Inductance  
Tstg  
-55 ... +150  
300  
°C  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
°C  
Advantages  
TSOLD  
FC  
260  
°C  
z
Plus 264TM Package for Clip or Spring  
Mounting Force  
30..120/6.7..27  
10  
N/lb.  
g
Mounting  
z High Power Density  
z Easy to Mount  
z Space Savings  
Weight  
Applications  
z Switch-Mode and Resonant-Mode  
Power Supplies  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ. Max.  
z DC-DC Converters  
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
5.0  
± 200 nA  
IDSS  
25 μA  
TJ = 125°C  
2.5 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
43 mΩ  
DS100247A(7/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFB120N50P2  
Symbol  
Test Conditions  
Characteristic Values  
PLUS264TM (IXFB) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
65  
105  
S
Ciss  
Coss  
Crss  
19  
1860  
40  
nF  
pF  
pF  
RGi  
Gate Input Resistance  
0.83  
Ω
td(on)  
tr  
td(off)  
tf  
43  
13  
80  
12  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
300  
96  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
94  
RthJC  
RthCS  
0.066 °C/W  
°C/W  
0.130  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
IS  
VGS = 0V  
120  
480  
1.5  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
300 ns  
IF = 0.5 • ID25, VGS = 0V  
QRM  
IRM  
2.0  
μC  
-di/dt = 100A/μs  
VR = 70V  
16.4  
A
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFB120N50P2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
120  
100  
80  
60  
40  
20  
0
240  
200  
160  
120  
80  
VGS = 10V  
8V  
VGS = 10V  
7V  
7V  
6V  
6V  
5V  
40  
5V  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 60A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
120  
100  
80  
60  
40  
20  
0
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
7V  
VGS = 10V  
6V  
I D = 120A  
I D = 60A  
5V  
4V  
1
2
3
4
5
6
7
8
9
10  
11  
12  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 60A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
140  
120  
100  
80  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
60  
40  
TJ = 25ºC  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
20  
40  
60  
80  
100 120 140 160  
ID - Amperes  
180 200 220 240  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFB120N50P2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
120  
100  
80  
60  
40  
20  
0
160  
140  
120  
100  
80  
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
60  
40  
20  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
350  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 250V  
I D = 60A  
I
G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
0
50  
100  
150  
200  
250  
300  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
1000  
100  
10  
100,000  
RDS(on) Limit  
= 1 MHz  
f
C
iss  
10,000  
1,000  
100  
25µs  
100µs  
C
oss  
1
1ms  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
T
C
rss  
10  
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFB120N50P2  
Fig. 13. Maximum Transient Thermal Impedance  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_120N50P2(9S)7-02-10-A  
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