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IXFB50N80Q2

型号：

IXFB50N80Q2

描述：

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

213 K

下载PDF手册
HiPerFETTM  
PowerMOSFETs  
Q-Class  
VDSS = 800V  
ID25 = 50A  
IXFB50N80Q2  
RDS(on) ≤ 160mΩ  
trr  
300ns  
≤
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low Intrinsic RG  
High dV/dt, Low trr  
PLUS264  
Symbol  
TestConditions  
MaximumRatings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
G
D
Tab  
S
ID25  
IDM  
TC =25°C  
50  
A
A
G = Gate  
S = Source  
D
= Drain  
TC = 25°C, Pulse Width Limited by TJM  
200  
Tab = Drain  
IA  
TC =25°C  
TC =25°C  
50  
5
A
J
EAS  
Features  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC =25°C  
20  
V/ns  
W
ꢀDouble Metal Process for Low Gate  
Resistance  
1135  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
ꢀAvalancheRated  
TJM  
Tstg  
ꢀLow Package Inductance  
ꢀFast Intrinsic Rectifier  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Advantages  
ꢀ
Weight  
10  
g
Easy to Mount  
SpaceSavings  
High Power Density  
ꢀ
ꢀ
Applications  
ꢀSwitch-Mode and Resonant-Mode  
Power Supplies >500kHz Switching  
ꢀDC-DCConverters  
ꢀ
DCChoppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
800  
3.0  
Typ.  
Max.  
ꢀPulseGeneration  
ꢀLaserDrivers  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
5.5  
V
± 200 nA  
IDSS  
50 µA  
3 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
160 mΩ  
DS99005D(01/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFB50N80Q2  
Symbol  
TestConditions  
CharacteristicValues  
PLUS264TM (IXFB) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
32  
48  
S
Ciss  
Coss  
Crss  
7200  
1200  
230  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
26  
25  
60  
13  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
260  
56  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
120  
RthJC  
RthCK  
0.11 °C/W  
°C/W  
0.13  
Source-DrainDiode  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS =0V  
50  
A
ISM  
Repetitive Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
200  
1.5  
A
V
VSD  
IF = 25A, VGS = 0V  
-di/dt = 100A/µs  
VR = 100V  
trr  
300  
ns  
µC  
A
QRM  
IRM  
1.1  
8.0  
Note: 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072  
4,881,106  
4,835,592  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405 B2 6,759,692  
6,710,463  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFB50N80Q2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
7V  
VGS = 10V  
7V  
6V  
5V  
6V  
5V  
0
0
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 25A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
VGS = 10V  
6V  
5V  
I D = 50A  
I D = 25A  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 25A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
60  
50  
40  
30  
20  
10  
0
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFB50N80Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2.5  
0.2  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.4  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
160  
140  
120  
100  
80  
VDS = 400V  
I
I
D = 25A  
G = 10mA  
60  
TJ = 125ºC  
40  
TJ = 25ºC  
20  
0
40
240  
0.4  
0.6  
0.8  
1.0  
1.2  
0
80  
120  
160  
200  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
0.200  
0.100  
= 1 MHz  
f
C
iss  
C
0.010  
oss  
C
rss  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF:F_50N80Q2(95)1-18-10-C  
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