IXFC 12N80P
ISOPLUS220TM (IXFC) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C unless otherwise specified)
Min.
Typ.
Max.
VDS= 20 V; ID = IT, pulse test
12
18
S
Ciss
Coss
Crss
2800
210
19
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
21
22
62
22
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 10 Ω (External)
Note:
Bottom heatsink (Pin 4) is
electrically isolated from Pin
1,2, or 3.
Qg(on)
Qgs
51
13
19
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
RthJC
RthCS
1.05 °C/W
° C/W
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25° C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
Ref: IXYS CO 0177 R0
VGS = 0 V
Repetitive
12
A
A
V
ISM
36
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IRM
IF = 12 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
250
ns
A
7
QRM
0.7
µC
Note 1: Test Current IT = 6 A
ADVANCE TECHNICAL INFORMATION
Theproductpresentedhereinisunderdevelopment. TheTechnicalSpecificationsofferedare
derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated objective result. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2
7,063,975 B2
6,771,478 B2 7,071,537
