Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS220 Outline
VDS = 10 V; ID = 0; IT Notes 1, 2
7.5
9.0
S
Ciss
Coss
Crss
2800
300
70
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
18
27
30
40
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS
,
ID = 0.5 • ID25, RG = 4.7 Ω (External)
76 100
32 60
Qg(on)
Qgs
110 120
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
15
40
25
50
Qgd
RthJC
RthCK
0.90 K/W
K/W
0.30
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
IS
VGS = 0 V
13
52
A
A
V
ISM
VSD
Repetitive; pulse width limited by TJM
IF = I , VGS = 0 V,
NoteS1
1.5
trr
T = 25°C
250
350
ns
ns
TJJ = 125°C
I = IS
-Fdi/dt = 100 A/µs,
VR = 100 V
QRM
T = 25°C
TJJ = 125°C
0.6
1.25
µC
µC
IRM
T = 25°C
TJJ = 125°C
9
15
A
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2.IT testcurrent:
IT = 6.5A
3.SeeIXFH13N50datasheetforcharacteristiccurves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
