请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFC14N80P

型号：

IXFC14N80P

描述：

PolarHV HiPerFET功率MOSFET ISOPLUS 220[ PolarHV HiPerFET Power MOSFET ISOPLUS 220 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

91 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFC 14N80P  
VDSS = 800  
ID25  
V
A
=
8
ISOPLUS 220TM  
RDS(on) ≤ 770 mΩ  
trr ≤ 250 ns  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
ISOPLUS220TM (IXFC)  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
30  
40  
V
V
VGSM  
G
ID25  
IDM  
TC = 25°C  
8
A
A
D
S
TC = 25°C, pulse width limited by TJM  
40  
(Isolated Tab)  
D = Drain  
IAR  
TC = 25°C  
7
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
G = Gate  
S = Source  
1.2  
dv/dt  
PD  
IS ≤ IDM,di/dt≤100A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 5 Ω  
,
10  
V/ns  
Features  
z Silicon chip on Direct-Copper-Bond  
TC = 25°C  
130  
W
substrate  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
z Low drain to tab capacitance(<30pF)  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
VISOL  
FC  
50/60 Hz, RMS, t = 1, leads-to-tab  
Mounting Force  
2500  
V~  
Applications  
z
11..65/2.5..15  
N/lb  
DC-DC converters  
z
Battery chargers  
Weight  
2
g
z
Switched-mode and resonant-mode  
power supplies  
z
DC choppers  
z AC motor control  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
z
Easy assembly  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 4 mA  
VGS = 30 V, VDS = 0 V  
800  
V
V
z
Space savings  
3.0  
5.5  
z
High power density  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
1
μA  
mA  
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = 7 A  
770 mΩ  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
DS99594E(07/06)  
© 2006 IXYS All rights reserved  
IXFC 14N80P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
ISOPLUS220TM (IXFC) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 20 V; ID = 7 A, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
8
15  
S
Ciss  
Coss  
Crss  
3900  
250  
19  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
25  
27  
75  
21  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 7 A  
RG = 5 Ω (External)  
Qg(on)  
Qgs  
61  
18  
20  
nC  
nC  
nC  
NOTE:  
1. Bottom heatsink (Pin 4) is electrically isolated from  
Pin 1, 2, or 3.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 7 A  
Qgd  
RthJC  
RthCS  
0.75  
0.21  
0.95°C/W  
°C/W  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
Ref: IXYS CO 0177 R0  
VGS = 0 V  
Repetitive  
14  
A
A
V
ISM  
40  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
trr  
IF = 25 A  
250 ns  
-di/dt = 100 A/μs  
VR = 100 V, VGS = 0 V  
QRM  
IRM  
0.4  
7
μC  
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFC 14N80P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
14  
12  
10  
8
27  
24  
21  
18  
15  
12  
9
V
= 10V  
7V  
V
= 10V  
7V  
GS  
GS  
6V  
6V  
6
4
6
5V  
2
3
5V  
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12  
0
3
6
9
12  
15  
18  
21  
24  
27  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 7A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
14  
12  
10  
8
V
= 10V  
GS  
V
= 10V  
GS  
6V  
I
= 14A  
D
5V  
I
= 7A  
D
6
4
2
0.7  
0.4  
0
0
2
4
6
8
10 12 14 16 18 20 22 24 26  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 7A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
2.8  
2.6  
2.4  
2.2  
2
9
8
7
6
5
4
3
2
1
0
V
= 10V  
GS  
T = 125ºC  
J
1.8  
1.6  
1.4  
1.2  
1
T = 25ºC  
J
0.8  
0
4
8
12  
16  
20  
24  
28  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS All rights reserved  
IXFC 14N80P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
20  
18  
16  
14  
12  
10  
8
30  
27  
24  
21  
18  
15  
12  
9
T
J
= - 40ºC  
T
J
= 125ºC  
25ºC  
125ºC  
25ºC  
- 40ºC  
6
4
6
2
3
0
0
3.5  
4
4.5  
5
5.5  
6
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
45  
V
=400V  
DS  
40  
35  
30  
25  
20  
15  
10  
5
I
I
= 7A  
D
G
= 10mA  
T
J
= 125ºC  
T
J
= 25ºC  
0
0
10  
20  
30  
40  
50  
60  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
1.00  
0.10  
0.01  
10,000  
1,000  
100  
f = 1 MHz  
C
iss  
C
C
oss  
rss  
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_14N80P (8J) 6-22-06.xls  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.228316s