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IXFC20N80P

型号：

IXFC20N80P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

133 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFC 20N80P  
IXFR 20N80P  
VDSS = 800  
ID25 = 10  
V
A
RDS(on) ≤ 500 mΩ  
≤ 250 ns  
Electrically Isolated Back Surface  
trr  
N-Channel Enhancement Mode  
Fast Recovery Diode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS220TM (IXFC)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
800  
800  
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
G
D
Isolated back surface  
ID25  
IDM  
TC = 25°C  
11  
60  
A
A
S
TC = 25°C, pulse width limited by TJM  
IAR  
TC = 25°C  
TC = 25°C  
TC = 25°C  
10  
30  
A
mJ  
J
ISOPLUS247TM (IXFR)  
E153432  
EAR  
EAS  
1.0  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 3 Ω  
,
10  
V/ns  
TC = 25°C  
166  
W
Isolated back surface  
D = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
TL  
1.6 mm (0.062 in.) from case for 10 s  
50/60 Hz, RMS, t = 1minute, leads-to-tab  
300  
°C  
Features  
z Silicon chip on Direct-Copper-Bond  
VISOL  
FC  
2500  
V~  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
z Low drain to tab capacitance(<30pF)  
Mounting Force  
(IXFC)  
(IXFR)  
11..65 / 2.5..15  
20..120 / 4.5..25  
N/lb  
N/lb  
Weight  
ISOPLUS220  
ISOPLUS247  
2
5
g
g
Applications  
z
DC-DC converters  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
Battery chargers  
z
Switched-mode and resonant-mode  
power supplies  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 4 mA  
VGS = 30 V, VDS = 0 V  
800  
V
V
3.0  
5.0  
z
DC choppers  
z AC motor control  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
1
μA  
mA  
Advantages  
z
TJ = 125°C  
Easy assembly  
z
Space savings  
RDS(on)  
VGS = 10 V, ID = 10 A  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
500 mΩ  
z
High power density  
DS99602E(08/06)  
© 2006 IXYS All rights reserved  
IXFC 20N80P  
IXFR 20N80P  
ISOPLUS220 (IXFC) Outline  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 10 A, pulse test  
12  
23  
S
Ciss  
Coss  
Crss  
4680  
360  
28  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
22  
24  
70  
25  
ns  
ns  
ns  
ns  
Note:  
VGS = 10 V, VDS = VDSS , ID = 10 A  
Bottom heatsink (Pin 4) is  
electrically isolated from Pin  
1,2, or 3.  
RG = 3 Ω (External)  
Qg(on)  
Qgs  
85  
25  
27  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A  
Qgd  
RthJC  
RthCS  
0.75 °C/W  
°C/W  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
IXYS CO 0177 R0  
Symbol  
IS  
Test Conditions  
ISOPLUS247 (IXFR) Outline  
VGS = 0 V  
Repetitive  
20  
60  
A
ISM  
A
V
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
trr  
IF = 20A, -di/dt = 100 A/μs  
250  
ns  
A
IRM  
QRM  
VR = 100 V; VGS = 0 V  
8
0.8  
μC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFC 20N80P  
IXFR 20N80P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
20  
18  
16  
14  
12  
10  
8
36  
32  
28  
24  
20  
16  
12  
8
V
GS  
= 10V  
7V  
V
= 10V  
7V  
GS  
6V  
6V  
6
5V  
4
5V  
4
2
0
0
0
2
4
6
8
10  
12  
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Norm alized to ID = 10A  
)
º
C
Value vs. Junction Tem perature  
20  
18  
16  
14  
12  
10  
8
2.6  
V
= 10V  
7V  
GS  
2.4  
2.2  
2
V
= 10V  
GS  
1.8  
1.6  
1.4  
1.2  
1
6V  
I
= 20A  
D
I
= 10A  
D
6
4
0.8  
0.6  
0.4  
2
5V  
0
0
2
4
6
8
10 12 14 16 18 20 22  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to  
ID = 10A Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Tem perature  
12  
11  
10  
9
2.6  
2.4  
2.2  
2
V
= 10V  
GS  
T = 125 C  
º
J
8
7
1.8  
1.6  
1.4  
1.2  
1
6
5
4
3
2
T = 25 C  
º
J
1
0.8  
0
0
5
10  
15  
20  
25  
30  
35  
40  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFC 20N80P  
IXFR 20N80P  
Fig. 7. Input Adm ittance  
Fig. 8. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
24  
20  
16  
12  
8
T
J
= -40 C  
º
25  
125  
º
C
º
C
T
J
= 125  
º
C
C
C
25  
º
º
-40  
4
0
0
0
5
10  
15  
20  
25  
90  
10  
3.5 3.75  
4
4.25 4.5 4.75  
5
5.25 5.5 5.75  
I D - Amperes  
VG S - Volts  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
60  
50  
40  
30  
20  
10  
0
V
I
= 400V  
DS  
= 10A  
D
I
= 10mA  
G
T = 125 C  
º
J
T = 25 C  
º
J
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
10  
20  
30  
40  
50  
60  
70  
80  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Maxim um Transient Therm al  
Resistance  
Fig. 11. Capacitance  
10000  
1000  
100  
1.00  
0.10  
0.01  
C
iss  
C
oss  
f = 1MHz  
C
rss  
20  
10  
0
5
10  
15  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
VD S - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_20N80P (7J) 8-23-06B  
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