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IXFC22N60P

型号：

IXFC22N60P

描述：

PolarHV HiPerFET功率MOSFET ISOPLUS220[ PolarHV HiPerFET Power MOSFET ISOPLUS220 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

231 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFC 22N60P  
VDSS = 600  
ID25 = 12 A  
V
RDS(on) ≤ 360 mΩ  
ISOPLUS220TM  
trr  
≤ 200 ns  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS220TM (IXFC)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 150° C  
600  
600  
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGS  
Continuous  
Tranisent  
30  
40  
V
V
VGSM  
G
ID25  
IDM  
TC =25° C  
12  
66  
A
A
D
S
TC = 25° C, pulse width limited by TJM  
(Isolated back surface*)  
IAR  
TC =25° C  
22  
A
G = Gate  
S = Source  
D = Drain  
EAR  
EAS  
TC =25° C  
TC =25° C  
40  
mJ  
J
1.0  
Features  
Silicon chip on Direct-Copper-Bond  
substrate  
l
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
10  
V/ns  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Low drain to tab capacitance(<35pF)  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
TC =25° C  
130  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
l
l
l
l
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
l
Fast intrinsic Rectifier  
VISOL  
FC  
50/60 Hz, RMS t = 1 minute leads-to-tab  
Mounting Force  
2500  
V~  
Applications  
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
11..65/2.5..15  
N/lb  
l
l
Weight  
2
g
l
power supplies  
DC choppers  
AC motor control  
l
Symbol  
Test Conditions  
Characteristic Values  
l
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
Easy assembly: no screws, or isolation  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
600  
V
V
l
foils required  
Space savings  
High power density  
Low collector capacitance to ground  
VDS = VGS, ID = 4 mA  
3.0  
5.0  
l
VGS  
=
30 VDC, VDS = 0  
100  
nA  
l
l
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
(low EMI)  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = IT , Note 1  
360 mΩ  
DS99439E(02/06)  
© 2006 IXYS All rights reserved  
IXFC 22N60P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25° C unless otherwise specified)  
Min. Typ. Max.  
ISOPLUS220TM (IXFC) Outline  
VDS = 20 V; ID = IT , Note 1  
13  
20  
S
Ciss  
Coss  
Crss  
4000  
320  
22  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
20  
20  
60  
23  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
RG = 4 Ω (External)  
Note:  
Bottom heatsink (Pin 4) is  
electrically isolated from Pin  
1,2, or 3.  
Qg(on)  
Qgs  
58  
23  
20  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
Qgd  
RthJC  
RthCS  
0.95 ° C/W  
° C/W  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25° C unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
12  
66  
A
Ref: IXYS CO 0177 R0  
ISM  
Repetitive  
A
V
VSD  
IF = IS, VGS = 0 V,  
1.5  
200  
trr  
IF = 25A, -di/dt = 100 A/µs  
ns  
QRM  
VR = 100 V, VGS = 0 V  
1.0  
µC  
Notes:  
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %;  
2. Test current IT = 11A.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463  
6,771,478 B2  
IXFC 22N60P  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
@ 25 C  
º
22  
20  
18  
16  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
8V  
V
= 10V  
9V  
GS  
GS  
8V  
7.5V  
7V  
7.5V  
7V  
6
6.5V  
6V  
4
6V  
2
0
0
0
0
0
1
2
3
4
5
6
7
8
9
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Norm alized to ID = 11A  
)
º
C
Value vs. Junction Tem perature  
22  
20  
18  
16  
14  
12  
10  
8
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6.5V  
6V  
I
= 22A  
D
I
= 11A  
D
6
4
5.5V  
5V  
0.7  
0.4  
2
0
2
4
6
8
10 12 14 16 18 20  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to  
ID = 11A Value vs. Drain Current  
Fig. 6. Drain Curre nt vs . Cas e  
Te m pe rature  
3
2.8  
2.6  
2.4  
2.2  
2
14  
12  
10  
8
V
= 10V  
GS  
º
T = 125 C  
J
1.8  
1.6  
1.4  
1.2  
1
6
4
2
T
= 25  
º
C
J
0.8  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFC 22N60P  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
30  
27  
24  
21  
18  
15  
12  
9
30  
27  
24  
21  
18  
15  
12  
9
T
J
= -40 C  
º
25 C  
º
125 C  
º
T
J
= 125  
º
C
C
C
25  
º
º
6
6
-40  
3
3
0
0
4.5  
0.4  
0
5
5.5  
6
6.5  
7
7.5  
8
0
3
6
9
12 15 18 21 24 27 30  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
70  
60  
50  
40  
30  
20  
10  
0
V
= 300V  
DS  
I
I
= 11A  
D
G
= 10mA  
T = 125  
J
º
C
T = 25  
J
º
C
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
10  
20  
30  
40  
50  
60  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forw ard-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
10000  
1000  
100  
100  
10  
1
f = 1MHz  
R
Lim it  
DS(on)  
25µs  
C
C
iss  
100µs  
1m s  
oss  
rss  
10m s  
DC  
T
= 150ºC  
C
J
T
= 25ºC  
C
10  
0.1  
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1000  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFC 22N60P  
Fig. 13. Maxim um Transient Therm al Resistance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
IXYSREF:T_22N60P(6J)02-17-06-B  
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