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IXFC26N50P

型号：

IXFC26N50P

描述：

PolarHV HiPerFET功率MOSFET ISOPLUS 220[ PolarHV HiPerFET Power MOSFET ISOPLUS 220 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

175 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFC 26N50P  
VDSS = 500  
ID25 = 15  
V
A
ISOPLUS 220TM  
RDS(on) ≤ 260 mΩ  
trr ≤ 250 ns  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
ISOPLUS220TM (IXFC)  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 150° C  
500  
500  
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
30  
40  
V
V
VGSM  
G
ID25  
IDM  
TC =25° C  
15  
78  
A
A
D
S
TC = 25° C, pulse width limited by TJM  
(Isolated Tab)  
D = Drain  
IAR  
TC =25° C  
26  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
40  
mJ  
J
G = Gate  
S = Source  
1.0  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
,
20  
V/ns  
Features  
TC =25° C  
130  
W
l
Silicon chip on Direct-Copper-Bond  
substrate  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
l
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Low drain to tab capacitance(<30pF)  
VISOL  
FC  
50/60 Hz, RMS, t = 1, leads-to-tab  
Mounting Force  
2500  
V~  
Applications  
l
11..65/2.5..15  
N/lb  
DC-DC converters  
l
Battery chargers  
Weight  
2
g
l
Switched-mode and resonant-mode  
power supplies  
l
DC choppers  
l
AC motor control  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
Advantages  
l
Easy assembly  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 30 VDC, VDS = 0  
500  
V
V
l
Space savings  
3.0  
5.5  
l
High power density  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = IT  
260 mΩ  
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %  
DS99310E(03/06)  
© 2006 IXYS All rights reserved  
IXFC 26N50P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
ISOPLUS220 Outline  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = IT, pulse test  
18  
28  
S
Ciss  
Coss  
Crss  
3600  
380  
48  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
20  
25  
58  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
RG = 4 Ω (External)  
Qg(on)  
Qgs  
65  
20  
20  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = IT  
Qgd  
RthJC  
RthCS  
0.95° C/W  
° C/W  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0 V  
Repetitive  
26  
A
A
V
ISM  
78  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
trr  
IF = 25 A  
250 ns  
-di/dt = 100 A/µs  
VR = 100 V, VGS = 0 V  
QRM  
0.3  
µC  
Note: Test Current IT = 13A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFC 26N50P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
V
= 10V  
8V  
GS  
GS  
8V  
7V  
7V  
6V  
6V  
6
4
2
5V  
5V  
15  
0
0
0
1
2
3
4
5
6
7
0
3
6
9
12  
18  
21  
24  
27  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 13A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 26A  
D
I
= 13A  
D
6
5V  
4
0.7  
0.4  
2
0
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 13A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3.2  
3
16  
14  
12  
10  
8
V
= 10V  
GS  
T
J
= 125ºC  
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
6
4
T
J
= 25ºC  
2
0.8  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS All rights reserved  
IXFC 26N50P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= 125ºC  
25ºC  
- 40ºC  
0
0
3.5  
4
4.5  
5
5.5  
6
6.5  
7
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 250V  
DS  
70  
60  
50  
40  
30  
20  
10  
0
I
I
= 13A  
D
G
= 10mA  
T
J
= 125ºC  
T
J
= 25ºC  
0.9  
0.4  
0.5  
0.6  
0.7  
0.8  
1
1.1  
0
5
10 15 20 25 30 35 40 45 50 55 60 65  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
10,000  
1,000  
100  
100  
f = 1 MHz  
R
Limit  
DS(on)  
C
C
iss  
25µs  
100µs  
1ms  
10  
oss  
10ms  
T
T
= 150ºC  
= 25ºC  
J
C
rss  
C
DC  
10  
1
0
5
10  
15  
20  
25  
30  
35  
40  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFC 26N50P  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
IXYSREF: T_26N50P(6J)02-09-06-B.xls  
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