PolarHTTM HiPerFET
Power MOSFET
IXFC 74N20P
VDSS = 200
V
A
ID25
RDS(on)
trr
=
=
35
36 mΩ
ISOPLUS220TM
≤ 200 ns
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Fast Recovery Diode, Avalanche
Rated
ISOPLUS 220TM
E153432
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
200
200
V
V
TJ = 25°C to 175°C; RGS = 1 MΩ
G
VGS
VGSM
Continuous
Transient
20
30
V
V
D
S
Isolated back surface*
ID25
IDM
TC = 25°C
35
A
A
TC = 25°C, pulse width limited by TJM
200
G = Gate
D = Drain
S = Source
IAR
TC = 25°C
60
A
EAR
EAS
TC = 25°C
TC = 25°C
40
mJ
J
1.0
Features
z Silicon chip on Direct-Copper-Bond
substrate
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 4 Ω
,
10
V/ns
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
TC = 25°C
120
W
z Low drain to tab capacitance(<35pF)
z Low RDS (on) HDMOSTM process
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, IISOL ≤ 1 mA, t = 1 minute
Mounting Force
300
°C
V~
N/lb
g
z Fast intrinsic Rectifier
VISOL
FC
2500
11..65 / 2.5..15
3
Applications
z
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
Weight
z
z
power supplies
DC choppers
z AC motor control
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
Advantages
Easy assembly: no screws, or isolation
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 4 mA
VGS = 20 VDC, VDS = 0
200
V
V
z
foils required
Space savings
High power density
Low collector capacitance to ground
2.5
5.0
z
z
100
nA
z
IDSS
VDS = VDSS
VGS = 0 V
25
250
μA
μA
(low EMI)
TJ = 125°C
RDS(on)
VGS = 10 V, ID = 37 A
36 mΩ
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
DS99243E(03/06)
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