IXFE 180N10
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
ISOPLUS-227 B
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10 V; ID = 60A, Note 2
VGS = 0 V, VDS = 25 V, f = 1 MHz
60
90
S
Ciss
Coss
Crss
9100
3200
1600
pF
pF
pF
td(on)
tr
td(off)
tf
50
90
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = I
RG = 1 Ω (External),
T
140
65
Qg(on)
Qgs
360
65
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = I
T
Qgd
190
RthJC
RthCK
0.25
K/W
K/W
Note: I = 90 A
0.07
T
Source-DrainDiode
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Symbol
TestConditions
IS
VGS = 0
180
720
A
Please see IXFN180N10 data
sheet for characteristic curves.
ISM
Repetitive;
Note1
A
VSD
IF = 100 A, VGS = 0 V,
Note2
1.5
V
trr
QRM
IRM
250
n s
µC
A
IF = 50 A, -di/dt = 100 A/µs, VR = 50 V
1.1
13
Notes: 1. Pulse width limited by T
JM.
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %
3. IT = 90A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
