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IXFE44N50Q

型号：

IXFE44N50Q

描述：

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

555 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
Q-Class  
VDSS ID25  
RDS(on)  
IXFE 44N50Q  
IXFE 48N50Q  
500 V 39 A 120 mΩ  
500 V 41 A 110 mΩ  
trr ≤ 250 ns  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, High dv/dt  
Preliminary data sheet  
ISOPLUS227TM (IXFE)  
Symbol  
TestConditions  
Maximum Ratings  
S
G
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
500  
500  
V
V
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
S
ID25  
IDM  
IAR  
TC = 25°C  
44N50Q  
48N50Q  
39  
41  
A
A
D
TC = 25°C, pulse width limited by TJM 44N50Q 176  
A
G = Gate  
D = Drain  
48N50Q 192  
A
S = Source  
TC = 25°C  
TC = 25°C  
48  
A
Either Source terminal at miniBLOC can be used  
asMainorKelvinSource  
EAR  
EAS  
60  
mJ  
mJ  
2.5  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
15  
V/ns  
Features  
•Conforms to SOT-227B outline  
•Low RDS (on) HDMOSTM process  
•Ruggedpolysilicongatecellstructure  
PD  
TC = 25°C  
400  
W
TJ  
-40 to +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-40 to +150  
•UnclampedInductiveSwitching(UIS)  
rated  
VISOL  
50/60 Hz, RMS  
ISOL≤ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
•Lowpackageinductance  
•FastintrinsicRectifier  
I
Md  
Mounting torque  
Terminal connection torque  
1.5/13  
1.5/13  
Nm/lb.in.  
Nm/lb.in.  
Weight  
Symbol  
19  
g
Applications  
• DC-DC converters  
• Batterychargers  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
• Switched-modeandresonant-mode  
min.  
typ.  
max.  
power supplies  
• DC choppers  
• Temperatureandlightingcontrols  
VDSS  
VGS(th)  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 4 mA  
500  
2.0  
V
V
4.0  
IGSS  
IDSS  
VGS = 20 VDC, VDS = 0  
100  
nA  
Advantages  
VDS = V  
T
= 25°C  
100  
2
µA  
VGS = 0DVSS  
TJJ = 125°C  
mA  
• Low cost  
• Easy to mount  
• Space savings  
• High power density  
RDS(on)  
VGS = 10 V, ID = IT  
44N50Q  
48N50Q  
120 mΩ  
110 mΩ  
Notes 1, 2  
© 2003 IXYS All rights reserved  
DS98895B(08/03)  
IXFE 44N50Q  
IXFE 48N50Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS-227 B  
VDS = 20 V; ID = IT, Notes 1, 2  
30  
42  
S
Ciss  
Coss  
Crss  
7000  
960  
230  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
33  
22  
75  
10  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
RG = 4.7 Ω (External),  
Qg(on)  
Qgs  
Qgd  
190  
40  
86  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
RthJC  
RthCK  
0.31 K/W  
K/W  
0.07  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
48  
192  
1.5  
A
A
V
ISM  
Repetitive; pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V,  
Note:1  
trr  
250 ns  
QRM  
IRM  
IF = 25A, -di/dt = 100 A/µs, VR = 100 V  
1.0  
10  
µC  
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
2. IT Test current:  
44N50Q: I = 22A  
48N50Q: ITT = 24A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXFE 44N50Q  
IXFE 48N50Q  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
48  
42  
36  
30  
24  
18  
12  
6
120  
90  
60  
30  
0
VGS = 10V  
VGS = 10V  
7V  
8V  
7V  
6V  
5V  
6V  
5V  
0
0
0
0
1
2
3
4
5
6
7
8
0
2
4
6
8
10 12 14 16 18 20  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
48  
42  
36  
30  
24  
18  
12  
6
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
VGS = 10V  
7V  
6V  
1.8  
1.6  
1.4  
1.2  
1
ID = 48A  
ID = 24A  
5V  
0.8  
0.6  
0.4  
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID25  
Value vs. ID  
Fig. 6. Drain Curre nt vs . Cas e  
Te m pe rature  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
45  
VGS = 10V  
40  
35  
30  
25  
20  
15  
10  
5
TJ = 125ºC  
TJ = 25ºC  
0.7  
0
12 24 36 48 60 72 84 96 108 120  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
I D - Amperes  
TC - Degrees Centigrade  
© 2003 IXYS All rights reserved  
IXFE 44N50Q  
IXFE 48N50Q  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
80  
70  
60  
50  
40  
30  
20  
10  
0
60  
54  
48  
42  
36  
30  
24  
18  
12  
6
TJ = -40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
-40ºC  
0
3.5  
4
4.5  
5
5.5  
6
6.5  
0
6
12 18 24 30 36 42 48 54 60  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs. Source-To-  
Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 250V  
ID = 24A  
IG = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0.3 0.4 0.5 0.6 0.7 0.8 0.9  
1
1.1 1.2  
0
20 40 60 80 100 120 140 160 180 200  
Q G - nanoCoulombs  
VS D - Volts  
Fig. 11. Capacitance  
Fig. 12. M axim um Trans ie nt The rm al  
Re s is tance  
10000  
1000  
100  
1
f = 1MHz  
C
iss  
C
C
oss  
rss  
30  
0.1  
0.01  
0
5
10  
15  
20  
25  
35  
40  
1
10  
100  
1000  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
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