IXFG 55N50
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISO264 OUTLINE
VDS = 10 V; ID = IT
Note 1
45
S
Ciss
Coss
Crss
9400
1280
460
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
45
60
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 1 Ω (External),
120
45
Qg(on)
Qgs
330
55
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
155
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - No Connection
RthJC
RthCK
0.30 K/W
K/W
0.15
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
55
220
1.5
A
A
V
ISM
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V
VSD
trr
250 ns
IF = 25A,-di/dt = 100 A/µs, VR = 100 V
QRM
IRM
1.0
10
µC
A
See IXFK55N50 data sheet for
characteristic curves.
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT test current: IT = 27.5A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
ofthefollowingU.S.patents:
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
