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IXFH110N15T2

型号：

IXFH110N15T2

描述：

TrenchT2 HiperFET功率MOSFET[ TrenchT2 HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

164 K

下载PDF手册
Preliminary Technical Information  
TrenchT2TM HiperFET  
Power MOSFET  
VDSS = 150V  
ID25 = 110A  
RDS(on) ≤ 13mΩ  
IXFH110N15T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
150  
150  
V
V
G
VDGR  
(TAB)  
D
S
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
ID25  
IDM  
TC = 25°C  
110  
300  
A
A
G = Gate  
S = Source  
D
= Drain  
TAB = Drain  
TC = 25°C, pulse width limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
55  
A
EAS  
800  
mJ  
Features  
dV/dt  
PD  
IS ≤ IDM,, VDD ≤ VDSS,TJ ≤ 175°C  
TC = 25°C  
15  
V/ns  
W
480  
z International standard package  
z 175°C Operating Temperature  
z High current handling capability  
z Fast intrinsic Rectifier  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +175  
z Dynamic dV/dt rated  
z
TL  
Tsold  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Low RDS(on)  
Weight  
6
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
150  
2.5  
Max.  
z DC-DC converters  
z Battery chargers  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
V
V
4.5  
z Switched-mode and resonant-mode  
power supplies  
±200 nA  
z DC choppers  
z AC motor drives  
IDSS  
VDS = VDSS  
VGS = 0V  
25 μA  
z Uninterruptible power supplies  
z High speed power switching  
applications  
TJ = 150°C  
500 μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
13 mΩ  
DS100094(12/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFH110N15T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-247 (IXFH) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
75  
115  
S
Ciss  
Coss  
Crss  
8600  
685  
77  
pF  
pF  
pF  
∅ P  
1
2
3
td(on)  
tr  
td(off)  
tf  
33  
16  
33  
18  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
e
RG = 3.3Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Qg(on)  
Qgs  
150  
42  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
46  
RthJC  
RthCH  
0.31 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
110  
440  
1.3  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
A
A
V
R
4.32  
5.49 .170 .216  
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 100A, VGS = 0V, Note 1  
IF = 55A, VGS = 0V  
trr  
85  
6.8  
ns  
A
IRM  
QRM  
-di/dt = 100A/μs  
VR = 75V  
290  
nC  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH110N15T2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
350  
300  
250  
200  
150  
100  
50  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 15V  
VGS = 15V  
10V  
8V  
10V  
9V  
8V  
7V  
6V  
7V  
6V  
5V  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
2
4
6
8
10  
12  
14  
16  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 55A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 110A  
7V  
I D = 55A  
6V  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 55A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
15V  
- - - -  
TJ = 175ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
50  
100  
150  
200  
250  
300  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFH110N15T2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
180  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
TJ = - 40ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
25ºC  
150ºC  
60  
60  
40  
40  
20  
20  
0
0
3.4  
3.8  
4.2  
4.6  
5.0  
5.4  
5.8  
6.2  
6.6  
0
20  
40  
60  
80  
100  
120  
140  
160  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 75V  
I D = 55A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4  
VSD - Volts  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
1,000.0  
100.0  
10.0  
1.0  
= 1 MHz  
f
R
Limit  
DS(on)  
25µs  
C
iss  
100µs  
C
C
oss  
1ms  
10ms  
T
T
= 175ºC  
= 25ºC  
J
100ms  
rss  
C
Single Pulse  
10  
0.1  
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_110N15T2(61)12-17-08  
IXFH110N15T2  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
20  
19  
18  
17  
16  
15  
14  
13  
12  
20  
19  
18  
17  
16  
15  
14  
RG = 3.3ꢀ  
GS = 10V  
VDS = 75V  
RG = 3.3Ω  
GS = 10V  
VDS = 75V  
V
V
TJ = 125ºC  
I D = 110A  
I D = 55A  
TJ = 25ºC  
55  
60  
65  
70  
75  
80  
85  
90  
95 100 105 110  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
28  
80  
70  
60  
50  
40  
30  
20  
280  
240  
200  
160  
120  
80  
90  
80  
70  
60  
50  
40  
30  
20  
tf  
td(off) - - - -  
t r  
td(on) - - - -  
26  
24  
22  
20  
18  
16  
RG = 3.3ꢀ, VGS = 10V  
DS = 75V  
TJ = 125ºC, VGS = 10V  
DS = 75V  
V
V
I D = 110A  
I D = 55A, 110A  
I D = 55A  
40  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
120  
100  
80  
60  
40  
20  
0
250  
210  
170  
130  
90  
23  
80  
tf  
td(off) - - - -  
tf  
td(off) - - - -  
RG = 3.3ꢀ, VGS = 10V  
22  
21  
20  
19  
18  
17  
70  
60  
50  
40  
30  
20  
TJ = 125ºC, VGS = 10V  
DS = 75V  
V
VDS = 75V  
I D = 55A  
TJ = 125ºC  
TJ = 25ºC  
I D = 110A  
50  
10  
2
4
6
8
10  
12  
14  
16  
18  
20  
55  
60  
65 70  
75 80  
85 90  
95 100 105 110  
ID - Amperes  
RG - Ohms  
© 2008 IXYS CORPORATION, All rights reserved  
IXFH110N15T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_110N15T2(61)12-17-08  
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