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IXFH110N25T

型号：

IXFH110N25T

描述：

TrenchHV功率MOSFET HiPerFET[ TrenchHV Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

139 K

下载PDF手册
TrenchHVTM Power  
MOSFET HiPerFETTM  
VDSS = 250V  
ID25 = 110A  
RDS(on) ≤ 24mΩ  
IXFH110N25T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXFH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
250  
250  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
(TAB)  
D
S
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
110  
75  
300  
A
A
A
G = Gate  
S = Source  
D
= Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
25  
1
A
J
TAB = Drain  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
10  
V/ns  
W
TC = 25°C  
694  
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z International standard package  
z Avalanche rated  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
z
Easy to mount  
Space savings  
High power density  
Md  
Mounting torque  
1.13 / 10  
6
Nm/lb.in.  
g
z
Weight  
z
Applications  
z DC-DC converters  
z Battery chargers  
z Switched-mode and resonant-mode  
power supplies  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
250  
2.5  
Typ.  
Max.  
z DC choppers  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 3mA  
VGS = ± 20V, VDS = 0V  
V
V
z AC motor drives  
z Uninterruptible power supplies  
4.5  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
10 μA  
1 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
24 mΩ  
© 2008 IXYS CORPORATION, All rights reserved  
DS99905A(08/08)  
IXFH110N25T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
65  
110  
S
Ciss  
Coss  
Crss  
9400  
850  
55  
pF  
pF  
pF  
1
2
3
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
19  
27  
60  
27  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2Ω (External)  
,
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qg(on)  
Qgs  
157  
40  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
Qgd  
50  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
Symbol  
Test Conditions  
Characteristic Values  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
110  
350  
1.2  
ÆP 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
A
A
R
S
4.32  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 55A, VGS = 0V, Note 1  
6.15 BSC  
V
170  
ns  
IF = 55A, -di/dt = 250A/μs  
VR= 100V, VGS = 0V  
QRM  
IRM  
946  
17  
nC  
A
Notes: 1. Pulse test, t ≤ 300ms; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be  
5 mm or less from the package body.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
IXFH110N25T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
250  
225  
200  
175  
150  
125  
100  
75  
VGS = 10V  
VGS = 10V  
8V  
7V  
6V  
8V  
7V  
6V  
5V  
5.5V  
50  
25  
5V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
150  
150  
0
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
VDS - Volts  
2
2.2 2.4 2.6  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 55A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 10V  
VGS = 10V  
8V  
7V  
6V  
I D = 110A  
I D = 55A  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
1
2
3
4
5
6
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 55A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
External Lead Current Limit  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
20 40 60 80 100 120 140 160 180 200 220 240 260  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFH110N25T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
60  
60  
40  
40  
20  
20  
0
0
3.4  
3.8  
4.2  
4.6  
5.0  
5.4  
5.8  
6.2  
1.3  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
160  
10  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
VDS = 125V  
I
I
D = 25A  
G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
0.00  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFH110N25T  
Fig. 13. Resistive Turn-on  
Fig. 14. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Rise Time vs. Drain Current  
29  
28  
27  
26  
25  
24  
23  
22  
21  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
RG = 2  
Ω
VGS = 15V  
TJ = 25ºC  
VDS = 125V  
RG = 2  
Ω
VGS = 15V  
DS = 125V  
V
I D = 110A  
I D = 55A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
20  
30  
40  
50  
60  
70  
80  
90  
100 110 120  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
50  
45  
40  
35  
30  
25  
20  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
74  
72  
70  
68  
66  
64  
62  
60  
58  
56  
54  
52  
50  
tf  
td(off) - - - -  
tr  
td(on)  
- - - -  
RG = 2 , VGS = 15V  
Ω
TJ = 125ºC, VGS = 15V  
DS = 125V  
VDS = 125V  
V
I D = 55A  
I D = 110A, 55A  
I D = 110A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
220  
200  
180  
160  
140  
120  
100  
80  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
tf  
td(off) - - - -  
VGS = 15V  
t f  
td(off) - - - -  
RG = 2  
,
Ω
TJ = 125ºC, VGS = 15V  
DS = 125V  
I D = 55A, 110A  
VDS = 125V  
V
TJ = 25ºC  
TJ = 125ºC  
TJ = 25ºC  
60  
TJ = 125ºC  
40  
20  
30  
40  
50  
60  
70  
80  
90 100 110 120  
2
3
4
5
6
7
8
9
10  
ID - Amperes  
RG - Ohms  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_110N25T(8W)08-11-08-A  
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