请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXFH120N20P_10

型号：

IXFH120N20P_10

描述：

极地HiPerFET功率MOSFET[ Polar HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

129 K

下载PDF手册
PolarTM HiPerFETTM  
Power MOSFET  
VDSS = 200V  
ID25 = 120A  
RDS(on) ≤ 22mΩ  
IXFH120N20P  
IXFK120N20P  
trr  
≤ 200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-247 (IXFH)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
200  
200  
V
V
G
D
S
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
Tab  
TO-264 (IXFK)  
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, Pulse Width Limited by TJM  
120  
75  
300  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
60  
2
A
J
G
D
S
PD  
TC = 25°C  
714  
10  
W
Tab  
dV/dt  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
V/ns  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Packages  
z Avalanche Rated  
Md  
Mounting Torque  
1.13/10  
Nm/lb.in.  
z Fast Intrinsic Diode  
z Low QG  
z Low RDS(on)  
Weight  
TO-247  
TO-264  
6
10  
g
g
z Low Drain-to-Tab Capacitance  
z Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z
Easy to Mount  
Space Savings  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 4mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
200  
V
V
Applications  
2.5  
5.0  
z DC-DC Coverters  
z Battery Chargers  
± 200 nA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
IDSS  
25 μA  
500 μA  
TJ = 150°C  
z DC Choppers  
z AC and DC Motor Drives  
z Uninterrupted Power Supplies  
z High Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
22 mΩ  
© 20109 IXYS CORPORATION, All Rights Reserved  
DS99223F(02/10)  
IXFH120N20P  
IXFK120N20P  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
40  
63  
S
Ciss  
Coss  
Crss  
6000  
1300  
265  
pF  
pF  
pF  
∅ P  
1
2
3
td(on)  
tr  
td(off)  
tf  
30  
35  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3.3Ω (External)  
100  
31  
e
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Qg(on)  
Qgs  
152  
40  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
75  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
RthJC  
RthCS  
0.21 °C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
TO-247  
TO-264  
0.21  
0.15  
°C/W  
°C/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-Drain Diode  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
Symbol  
Test Conditions  
Characteristic Values  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
120  
300  
1.5  
TO-264 (IXFK) Outline  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS , VGS = 0V, Note 1  
trr  
100  
0.4  
6.0  
200  
ns  
μC  
A
IF = 25A, -di/dt = 100A/μs  
QRM  
IRM  
VR = 100V, VGS = 0V  
1 - Gate  
2 - Drain  
3 - Source  
4 - Drain  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Millimeter  
Dim.  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
c
D
0.53  
25.91 26.16  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH120N20P  
IXFK120N20P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
ºC  
120  
100  
80  
60  
40  
20  
0
270  
240  
210  
180  
150  
120  
90  
VGS = 10V  
V
GS  
= 10V  
9V  
8V  
9V  
8V  
7V  
7V  
60  
6V  
5V  
6V  
30  
0
0
0
0
0.5  
1
VD S - Volts  
1.5  
2
2.5  
0
2
4
6
8
VD S - Volts  
10  
12  
14  
16  
Fig. 3. Output Characteristics  
@ 150  
Fig. 4. RDS(on Normalized to 0.5 ID25  
)
º
C
Value vs. Junction Temperature  
120  
100  
80  
60  
40  
20  
0
VGS = 10V  
3
2.5  
2
VGS = 10V  
9V  
8V  
ID = 120A  
7V  
6V  
ID = 60A  
1.5  
1
5V  
4
0.5  
1
2
3
VD S - Volts  
5
6
-50 -25  
0
25  
TJ - Degrees Centigrade  
50  
75 100 125 150 175  
Fig. 5. RDS(on) Normalized to 0.5 ID25  
Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Temperature  
4
3.5  
3
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
º
TJ = 175 C  
External Lead Current Limit  
2.5  
2
VGS = 10V  
V
GS  
= 15V  
1.5  
1
º
TJ = 25 C  
0.5  
-50 -25  
0
25  
50  
TC - Degrees Centigrade  
75 100 125 150 175  
30 60 90 120 150 180 210 240 270 300  
I D - Amperes  
© 20109 IXYS CORPORATION, All Rights Reserved  
IXFH120N20P  
IXFK120N20P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
180  
150  
120  
90  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
º
TJ = -40 C  
25ºC  
60  
150ºC  
º
TJ = 150 C  
25ºC  
30  
-40ºC  
0
4
4.5  
5
5.5  
6
VG S - Volts  
6.5  
7
7.5  
8
8.5  
0
30  
60  
90 120  
I D - Amperes  
150  
180  
210  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 100V  
I
I
D = 60A  
G = 10mA  
º
TJ = 150 C  
º
TJ = 25 C  
0
0.4  
0.6  
0.8 1  
VS D - Volts  
1.2  
1.4  
1.6  
0
20  
40  
60  
80  
Q G - nanoCoulombs  
100 120 140 160  
Fig. 12. Forw ard-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1000  
100  
10  
º
TJ = 175 C  
f = 1MHz  
º
C = 25 C  
T
RDS(on) Limit  
C
iss  
25µs  
100µs  
1ms  
C
oss  
C
rss  
10ms  
DC  
0
5
10  
15  
20  
VDS - Volts  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFH120N20P  
IXFK120N20P  
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce  
1.00  
0.10  
0.01  
1
10  
100  
1000  
Puls e W idth - millis ec onds  
© 20109 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_120N20P(8S)5-05-04  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.180793s