HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
VDSS
ID25
= 1000V
= 12A
IXFH12N100F
IXFT12N100F
RDS(on) ≤ 1.05Ω
trr
≤ 250ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low
Intrinsic Rg, High dV/dt, Low trr
TO-247 (IXFH)
Symbol
VDSS
Test Conditions
Maximum Ratings
TAB
TJ = 25°C to 150°C
1000
V
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1000
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
TO-268 (IXFT)
ID25
IDM
TC = 25°C
12
48
A
A
TC = 25°C, pulse width limited by TJM
G
S
IAR
TC = 25°C
TC = 25°C
12
1
A
J
EAS
TAB
dV/dt
IS ≤ IDM, di/dt < 100A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2Ω
20
V/ns
G = Gate
S = Source TAB = Drain
D
= Drain
PD
TC = 25°C
300
-55 ... +150
150
W
°C
°C
°C
°C
°C
Features
TJ
z RF capable MOSFETs
z Double metal process for low gate
resistance
z Rugged polysilicon gate cell structure
z Unclamped Inductive Switching (UIS)
rated
TJM
Tstg
TL
-55 ... +150
300
Maximum lead temperature for soldering
Plastic body for 10s
TSOLD
Md
260
Mounting torque (TO-247)
1.13/10
Nm/lb.in.
z Low package inductance
- easy to drive and to protect
z Fast intrinsic rectifier
Weight
TO-247
TO-268
6
4
g
g
Applications
z
DC-DC converters
Switched-mode and resonant-mode
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ. Max.
power supplies, >500kHz switching
DC choppers
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = ± 20V, VDS = 0V
1000
3.0
V
V
z 13.5 MHz industrial applications
z Pulse generation
z Laser drivers
5.5
z RF amplifiers
± 100 nA
IDSS
VDS = VDSS
VGS = 0V
50 μA
1.5 mA
Advantages
TJ = 125°C
z
Space savings
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
1.05
Ω
z
High power density
DS98856A(01/03)
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