IXFH12N120P IXFV12N120P
IXFV12N120PS
Symbol
Test Conditions
Characteristic Values
PLUS220 (IXFV) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 20V, ID = 0.5 • ID25, Note 1
5
9
S
Ciss
Coss
Crss
5400
290
40
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
Gate input resistance
RGi
1.5
Ω
td(on)
tr
td(off)
tf
34
25
62
34
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2Ω (External)
Qg(on)
Qgs
103
29
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
41
RthJC
RthCS
0.23 °C/W
°C/W
(TO-247, PLUS 220)
0.21
Source-Drain Diode
Characteristic Values
TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
12
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
48
TO-247 (IXFH) Outline
1.5
trr
300 ns
IF = 6A, -di/dt = 100A/μs
QRM
IRM
0.5
μC
VR = 100V, VGS = 0V
6
A
∅ P
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
PLUS220SMD (IXFV_S) Outline
e
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
