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IXFH160N15T

型号：

IXFH160N15T

描述：

功率MOSFET TrenchHV HiPerFET[ Power MOSFET TrenchHV HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

132 K

下载PDF手册
Preliminary Technical Information  
Power MOSFET TrenchHVTM  
HiPerFETTM  
IXFH160N15T  
VDSS = 150V  
ID25 = 160A  
RDS(on) ≤ 9.6mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXFH)  
Symbol  
Test Conditions  
Maximum  
Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
150  
150  
V
V
VGSM  
Transient  
± 30  
V
ID25  
ILRMS  
IDM  
TC = 25°C  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
160  
75  
430  
A
A
A
G
(TAB)  
D
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
5
1
A
J
dV/dt  
Pd  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
10  
V/ns  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC = 25°C  
830  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
z 175 °C Operating Temperature  
Md  
Mounting torque  
1.13 / 10  
6
Nm/lb.in.  
g
Weight  
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
150  
V
V
z DC-DC converters  
z Battery chargers  
2.5  
5.0  
z Switched-mode and resonant-mode  
power supplies  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
5
μA  
250 μA  
z DC choppers  
z AC motor control  
TJ = 150°C  
z Uninterruptible power supplies  
z High speed power switching  
applications  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
8.0  
9.6 mΩ  
© 2008 IXYS CORPORATION, All rights reserved  
DS99965(01/08)  
IXFH160N15T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V, ID = 60A, Note 1  
65  
105  
S
Ciss  
Coss  
Crss  
8800  
1170  
150  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1 MHz  
1
2
3
td(on)  
tr  
td(off)  
tf  
21  
21  
52  
29  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2Ω (External)  
Qg(on)  
Qgs  
160  
43  
nC  
nC  
nC  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
VGS= 10V, VDS = 0.5 • VDSS, ID = 25A  
Qgd  
46  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
0.25  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
160  
430  
1.2  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
IS  
VGS = 0V  
A
A
V
ÆP 3.55  
Q
3.65  
.140 .144  
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
trr  
90  
12  
160 μs  
IF = 80A, -di/dt = 200A/μs  
VR = 75V, VGS = 0V  
QRM  
IRM  
A
0.55  
μC  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFH160N15T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 10V  
VGS = 10V  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
60  
6V  
5V  
40  
5V  
20  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0
1
2
3
4
5
6
7
8
9
10  
175  
175  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 80A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
160  
140  
120  
100  
80  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
VGS = 10V  
8V  
7V  
6V  
5V  
I D = 160A  
I D = 80A  
60  
40  
20  
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
3.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 80A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
External Lead Current Limit  
VGS = 10V  
TJ = 175ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
40  
80  
120  
160  
200  
240  
280  
320  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFH160N15T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
60  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
VDS = 75V  
I D = 25A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
0.00  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFH160N15T  
Fig. 13. Resistive Turn-on  
Fig. 14. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Rise Time vs. Drain Current  
24  
22  
20  
18  
16  
14  
12  
10  
24  
22  
20  
18  
16  
14  
12  
10  
RG = 2  
Ω
VGS = 15V  
VDS = 75V  
RG = 2  
Ω
TJ = 25ºC  
VGS = 15V  
VDS = 75V  
I D = 40A  
I D = 80A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
40  
45  
50  
55  
60  
65  
70  
75  
80  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
40  
110  
100  
90  
42  
27  
26  
25  
24  
23  
22  
21  
20  
19  
tr  
td(on) - - - -  
TJ = 125ºC, VGS = 15V  
VDS = 75V  
tf  
td(off) - - - -  
38  
34  
30  
26  
22  
18  
14  
10  
RG = 2  
,
VGS = 15V  
Ω
36  
32  
28  
24  
20  
16  
VDS = 75V  
I D = 80A, 40A  
I D = 40A  
80  
I D = 80A  
70  
60  
50  
2
3
4
5
6
7
8
9
10  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
40  
36  
32  
28  
24  
20  
16  
110  
100  
90  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
tf  
td(off) - - - -  
- - - -  
td(off)  
tf  
TJ = 125ºC, VGS = 15V  
VDS = 75V  
RG = 2 , VGS = 15V  
Ω
TJ = 25ºC  
VDS = 75V  
I D = 40A  
80  
TJ = 125ºC  
I D = 80A  
70  
TJ = 25ºC  
60  
TJ = 125ºC  
50  
60  
40  
45  
50  
55  
60  
65  
70  
75  
80  
2
3
4
5
6
7
8
9
10  
ID - Amperes  
RG - Ohms  
IXYS REF: T_160N15T(8W)06-07-07  
© 2008 IXYS CORPORATION, All rights reserved  
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