请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一至周六 8:30-17:30

QQ咨询

一对一服务 找料无忧

专属客服：823711899

服务时间

周一至周六 8:30-17:30

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一至周六 8:30-17:30

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一至周六 8:30-17:30

IXFH22N60P

型号：

IXFH22N60P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

295 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFETs  
IXFH 22N60P  
IXFV 22N60P  
IXFV 22N60PS  
VDSS = 600  
ID25 = 22 A  
V
RDS(on) ≤ 350 mΩ  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
trr  
≤ 200 ns  
Avalanche Rated  
TO-247 (IXFH)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 150° C  
600  
600  
V
TJ = 25° C to 150° C; RGS = 1 MΩ  
V
G
D (TAB)  
VGS  
Continuous  
Tranisent  
30  
40  
V
V
D
S
VGSM  
ID25  
IDM  
TC =25° C  
22  
66  
A
A
TC = 25° C, pulse width limited by TJM  
PLUS220 (IXFV)  
IAR  
TC =25° C  
22  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
40  
mJ  
J
1.0  
G
D
S
D (TAB)  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
20  
V/ns  
TC =25° C  
400  
W
PLUS220SMD (IXFV...S)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
G
S
D (TAB)  
M
Mounting torque  
Mounting Force  
(TO-247)  
(PLUS220)  
1.13/10 Nm/lb.in.  
FCd  
11..65/2.5..15  
Nm/lb.  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Weight  
TO-247  
PLUS220 & PLUS220SMD  
6
4
g
g
Features  
l
Fast intrinsic diode  
Unclamped Inductive Switching (UIS)  
rated  
International standard packages  
Low package inductance  
- easy to drive and to protect  
Symbol  
Test Conditions  
Characteristic Values  
l
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 30 VDC, VDS = 0  
600  
V
V
l
l
3.0  
5.5  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
Advantages  
l
TJ = 125° C  
Easy to mount  
Space savings  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %  
350 mΩ  
l
High power density  
DS99315E(03/06)  
© 2006 IXYS All rights reserved  
IXFH 22N60P IXFV22N60P  
IXFV 22N60PS  
TO-247 AD (IXFH) Outline  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 0.5 ID25, pulse test  
15  
20  
S
1
2
3
Ciss  
Coss  
Crss  
3600  
305  
38  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
20  
20  
60  
23  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
RG = 4 Ω (External)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qg(on)  
Qgs  
58  
20  
22  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Qgd  
RthJC  
RthCS  
0.31 ° C/W  
° C/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
0.21  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
Repetitive  
22  
66  
A
PLUS220 (IXFV) Outline  
ISM  
A
V
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
trr  
IF = 26A  
200  
ns  
-di/dt = 100 A/µs  
VR = 100V, VGS = 0 V  
QRM  
1.0  
µC  
PLUS220SMD (IXFV_S) Outline  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFH 22N60P IXFV22N60P  
IXFV 22N60PS  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25  
º
C
@ 25 C  
º
22  
20  
18  
16  
14  
12  
10  
8
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
8V  
V
= 10V  
9V  
GS  
GS  
8V  
7.5V  
7V  
7.5V  
7V  
6
6.5V  
6V  
4
6V  
7
2
0
0
0
0
0
1
2
3
4
5
6
8
9
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Norm alized to ID = 11A  
)
º
C
Value vs. Junction Tem perature  
22  
20  
18  
16  
14  
12  
10  
8
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
8V  
GS  
V
= 10V  
GS  
7V  
6.5V  
6V  
I
= 22A  
D
I
= 11A  
D
6
4
5.5V  
5V  
0.7  
0.4  
2
0
2
4
6
8
10 12 14 16 18 20  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to  
ID = 11A Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Tem perature  
3
2.8  
2.6  
2.4  
2.2  
2
24  
20  
16  
12  
8
V
= 10V  
GS  
º
T = 125 C  
J
1.8  
1.6  
1.4  
1.2  
1
4
º
T = 25 C  
J
0.8  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFH 22N60P IXFV22N60P  
IXFV 22N60PS  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
30  
27  
24  
21  
18  
15  
12  
9
30  
27  
24  
21  
18  
15  
12  
9
º
= -40 C  
T
J
º
25 C  
º
125 C  
º
= 125 C  
T
J
º
25 C  
6
6
º
-40 C  
3
3
0
0
4.5  
0.4  
0
5
5.5  
6
6.5  
7
7.5  
8
0
3
6
9
12 15 18 21 24 27 30  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
70  
60  
50  
40  
30  
20  
10  
0
V
= 300V  
DS  
I
I
= 11A  
D
G
= 10mA  
º
T = 125 C  
J
º
T = 25 C  
J
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
10  
20  
30  
40  
50  
60  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forw ard-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
100  
10  
1
10000  
1000  
100  
f = 1MHz  
R
Limit  
DS(on)  
C
C
iss  
25µs  
100µs  
oss  
rss  
1ms  
10ms  
DC  
T
T
= 150ºC  
= 25ºC  
C
J
C
10  
10  
100  
1000  
5
10  
15  
20  
25  
30  
35  
40  
VD S - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFH 22N60P IXFV22N60P  
IXFV 22N60PS  
Fig. 13. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
IXYSREF:T_22N60P(6J)02-17-06-B  
厂商 型号 描述 页数 下载

ILSI

 		IXF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15AT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15BT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15CT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A15DT 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

ILSI

 		IXF-10A20AF 晶体滤波器3线金属包装[ Crystal Filter 3 Lead Metal Package ] 1 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

代理产品

代理品牌

代理器件

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.278024s