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IXFH28N60P3

型号:

IXFH28N60P3

描述:

Polar3 HiperFET功率MOSFET[ Polar3 HiperFET Power MOSFETs ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

130 K

Advance Technical Information  
Polar3TM HiperFETTM  
Power MOSFETs  
VDSS = 600V  
ID25 = 28A  
RDS(on) 260mΩ  
IXFQ28N60P3  
IXFH28N60P3  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-3P (IXFQ)  
G
D
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
Tab  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
VDGR  
TO-247 ( IXFH)  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
28  
70  
A
A
TC = 25°C, Pulse Width Limited by TJM  
G
IA  
TC = 25°C  
TC = 25°C  
14  
A
D
Tab  
S
EAS  
500  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
35  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
695  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z Fast Intrinsic Rectifier  
z Avalanche Rated  
z Low RDS(ON) and QG  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in.  
z Low Package Inductance  
Weight  
TO-3P  
TO-247  
5.5  
6.0  
g
g
Advantages  
z High Power Density  
z Easy to Mount  
z Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 2.5mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
Applications  
5.0  
z Switch-Mode and Resonant-Mode  
Power Supplies  
z DC-DC Converters  
±100 nA  
IDSS  
25 μA  
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
TJ = 125°C  
1.5 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
260 mΩ  
DS100322(03/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFQ28N60P3  
IXFH28N60P3  
Symbol  
Test Conditions  
Characteristic Values  
TO-3P Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
18  
30  
S
Ciss  
Coss  
Crss  
3560  
360  
3.3  
pF  
pF  
pF  
RGi  
1.0  
Ω
td(on)  
tr  
td(off)  
tf  
27  
18  
48  
19  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
50  
17  
14  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
0.25  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
TO-247 Outline  
IS  
VGS = 0V  
28  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
112  
1.4  
P  
trr  
250  
ns  
A
1
2
3
IF = 14A, -di/dt = 100A/μs  
IRM  
QRM  
9.0  
0.8  
VR = 100V, VGS = 0V  
μC  
e
Terminals: 1 - Gate  
2 - Drain  
Note  
1. Pulse test, t 300μs, duty cycle, d 2%.  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFQ28N60P3  
IXFH28N60P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
28  
24  
20  
16  
12  
8
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
8V  
VGS = 10V  
8V  
7V  
6V  
7V  
6V  
5V  
4
5V  
0
0
5
10  
15  
20  
25  
30  
0
0
0
1
2
3
4
5
6
7
8
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 14A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
28  
24  
20  
16  
12  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
6V  
I D = 28A  
I D = 14A  
5V  
4
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 14A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
30  
25  
20  
15  
10  
5
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
10  
20  
30  
40  
50  
60  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFQ28N60P3  
IXFH28N60P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
0
10  
20  
30  
40  
50  
3.0  
0.3  
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 300V  
I D = 14A  
I G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100  
10  
1
10,000  
1,000  
100  
10  
RDS(on) Limit  
C
100µs  
iss  
C
oss  
TJ = 150ºC  
C
TC = 25ºC  
rss  
1ms  
Single Pulse  
= 1 MHz  
5
f
1
0.1  
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFQ28N60P3  
IXFH28N60P3  
Fig. 13. Maximum Transient Thermal Impedance  
AAAAA  
0.3  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_28N60P3(K7)03-23-11  
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