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IXFH400N075T2

型号：

IXFH400N075T2

描述：

TrenchT2 HiperFET功率MOSFET[ TrenchT2 HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

187 K

下载PDF手册
Advance Technical Information  
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 75V  
ID25 = 400A  
RDS(on) ≤ 2.3mΩ  
IXFH400N075T2  
IXFT400N075T2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-247 (IXFH)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D
D (Tab)  
S
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
75  
75  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
TO-268 (IXFT)  
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
Lead Current Limit, RMS  
400  
160  
A
A
A
G
S
TC = 25°C, Pulse Width Limited by TJM  
1000  
D (Tab)  
IA  
TC = 25°C  
TC = 25°C  
200  
1.5  
A
J
EAS  
G = Gate  
S = Source  
D
= Drain  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
15  
V/ns  
W
Tab = Drain  
1000  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
Features  
TJM  
Tstg  
-55 ... +175  
z International Standard Packages  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Avalanche Rated  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
z Fast Intrinsic Diode  
Weight  
TO-247  
TO-268  
6
4
g
g
z
Low RDS(on)  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z
Easy to Mount  
Space Savings  
High Power Density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
75  
V
V
z
z
2.0  
4.0  
±200 nA  
Applications  
IDSS  
25 μA  
z
TJ = 150°C  
VGS = 10V, ID = 100A, Notes 1 & 2  
1.5 mA  
DC/DC Converters and Off-line UPS  
Primary- Side Switch  
High Current Switching Applications  
z
RDS(on)  
2.3 mΩ  
z
DS100221(12/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFH400N075T2  
IXFT400N075T2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
80  
130  
S
Ciss  
Coss  
Crss  
24  
2770  
455  
nF  
pF  
pF  
∅ P  
1
2
3
RGi  
Gate Input Resistance  
1.33  
Ω
td(on)  
tr  
td(off)  
tf  
35  
20  
67  
44  
ns  
ns  
ns  
ns  
Resistive Switching Times  
e
V
GS = 10V, VDS = 0.5 • VDSS, ID = 200A  
Terminals: 1 - Gate  
2 - Drain  
Tab - Drain  
RG = 1Ω (External)  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Qg(on)  
Qgs  
420  
114  
130  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCH  
0.15 °C/W  
°C/W  
TO-247  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Source-Drain Diode  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
∅P 3.55  
Q
3.65  
.140 .144  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IS  
VGS = 0V  
400  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
1200  
1.2  
TO-268 (IXFT) Outline  
trr  
77  
5.4  
ns  
A
IF = 100A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 37.5V  
210  
nC  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Includes lead resistance.  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH400N075T2  
IXFT400N075T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
400  
350  
300  
250  
200  
150  
100  
50  
VGS = 15V  
10V  
VGS = 15V  
10V  
8V  
8V  
7V  
7V  
6V  
6V  
5V  
4V  
5V  
4V  
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.0  
-50  
-50  
0.5  
1.0  
1.5  
2.0  
2.5  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 200A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
350  
300  
250  
200  
150  
100  
50  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 15V  
VGS = 10V  
10V  
8V  
7V  
I D = 400A  
6V  
I D = 200A  
5V  
4V  
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 200A  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
180  
160  
140  
120  
100  
80  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
External Lead Current limit  
TJ = 175ºC  
VGS = 10V  
15V  
60  
40  
TJ = 25ºC  
20  
0
0
50  
100  
150  
200  
250  
300  
350  
400  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFH400N075T2  
IXFT400N075T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
220  
200  
180  
160  
140  
120  
100  
80  
240  
200  
160  
120  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
60  
40  
40  
20  
0
0
0
20  
40  
60  
80  
100 120 140 160 180 200 220 240  
ID - Amperes  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
350  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 37.5V  
I
I
D = 200A  
G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100,000  
10,000  
1,000  
100  
10,000  
1,000  
100  
10  
= 1 MHz  
f
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
External Lead Limit  
C
oss  
1ms  
T
= 175ºC  
J
10ms  
T
= 25ºC  
C
C
rss  
100ms  
Single Pulse  
DC  
1
0
5
10  
15  
20  
25  
30  
35  
40  
0.1  
1
10  
VDS - Volts  
100  
1000  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFH400N075T2  
IXFT400N075T2  
Fig. 14. Resistive Turn-on  
Fig. 13. Resistive Turn-on  
Rise Time vs. Drain Current  
Rise Time vs. Junction Temperature  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
RG = 1ꢀ , VGS = 10V  
RG = 1Ω , VGS = 10V  
DS = 37.5V  
VDS = 37.5V  
V
TJ = 125ºC  
I D = 100A  
I D = 200A  
TJ = 25ºC  
40  
60  
80  
100  
120  
140  
160  
180  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
500  
400  
300  
200  
100  
0
120  
60  
55  
50  
45  
40  
35  
30  
25  
20  
100  
t r  
t
d(on) - - - -  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = 10V  
DS = 37.5V  
95  
90  
85  
80  
75  
70  
65  
60  
TJ = 125ºC, VGS = 10V  
DS = 37.5V  
100  
80  
60  
40  
20  
V
V
I D = 200A  
I D = 100A  
I D = 200A  
I D = 100A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
600  
500  
400  
300  
200  
100  
0
600  
500  
400  
300  
200  
100  
0
55  
50  
45  
40  
35  
30  
25  
20  
120  
110  
100  
90  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 37.5V  
t f  
t
d(off) - - - -  
RG = 1ꢀ, VGS = 10V  
DS = 37.5V  
I D = 200A, 100A  
V
V
TJ = 25ºC, 125ºC  
80  
70  
60  
50  
40  
60  
80  
100  
120  
140  
160  
180  
200  
1
2
3
4
5
6
7
8
9
10  
ID - Amperes  
RG - Ohms  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFH400N075T2  
IXFT400N075T2  
Fig. 19. Maximum Transient Thermal Impedance  
dfafas  
0.300  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_400N075T2(98)12-15-09  
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