IXFH40N30Q
IXFT40N30Q
Symbol
Test Conditions
Characteristic Values
TO-268 Outline
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
20
27
S
Ciss
Coss
Crss
3560
640
pF
pF
pF
170
td(on)
tr
td(off)
tf
20
35
40
12
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1.5Ω (External)
Terminals: 1 - Gate
2 - Drain
4 - Drain
3 - Source
Qg(on)
Qgs
92
22
38
140
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
35 nC
70 nC
Qgd
RthJC
RthCS
0.42 °C/W
°C/W
0.25
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
40
A
A
V
TO-247 Outline
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
160
1.5
trr
250
ns
A
IF = 40A, -di/dt = 100A/μs
∅ P
IRM
QRM
8.00
0.85
1
2
3
VR = 100V, VGS = 0V
μC
Note
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
e
Terminals: 1 - Gate
2 - Drain
3 - Source
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
