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IXFH42N60P3

型号:

IXFH42N60P3

描述:

Polar3 HiPerFET功率MOSFET[ Polar3 HiperFET Power MOSFET ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

5 页

PDF大小:

116 K

Advance Technical Information  
Polar3TM HiperFETTM  
Power MOSFET  
VDSS = 600V  
ID25 = 42A  
RDS(on) 185mΩ  
IXFH42N60P3  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-247  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D
Tab  
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
VDGR  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
42  
A
A
TC = 25°C, Pulse Width Limited by TJM  
100  
IA  
TC = 25°C  
TC = 25°C  
21  
1
A
J
EAS  
Features  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
35  
V/ns  
W
z International Standard Package  
z Fast Intrinsic Rectifier  
z Avalanche Rated  
830  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z Low RDS(ON) and QG  
TJM  
Tstg  
z Low Package Inductance  
-55 ... +150  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13 / 10  
6
Nm/lb.in.  
g
z High Power Density  
z Easy to Mount  
z Space Savings  
Weight  
Applications  
z Switch-Mode and Resonant-Mode  
Power Supplies  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z DC-DC Converters  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
5.0  
±100 nA  
IDSS  
25 μA  
TJ = 125°C  
1.5 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
185 mΩ  
DS100296A(03/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFH42N60P3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXFH) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
25  
42  
S
Ciss  
Coss  
Crss  
5150  
500  
2.8  
pF  
pF  
pF  
P  
1
2
3
RGi  
1.0  
Ω
td(on)  
tr  
td(off)  
tf  
32  
23  
60  
17  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
e
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Qg(on)  
Qgs  
78  
23  
20  
nC  
nC  
nC  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCS  
0.15 °C/W  
°C/W  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-Drain Diode  
P 3.55  
3.65  
.140 .144  
Symbol  
Test Conditions  
Characteristic Values  
Q
5.89  
6.40 0.232 0.252  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IS  
VGS = 0V  
42  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
168  
1.3  
trr  
250  
ns  
A
IF = 21A, -di/dt = 100A/μs  
IRM  
QRM  
12.4  
1.4  
VR = 100V, VGS = 0V  
μC  
Note  
1. Pulse test, t 300μs, duty cycle, d 2%.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH42N60P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
7V  
VGS = 10V  
7V  
6V  
6V  
5V  
5V  
0
0
5
10  
15  
20  
25  
30  
0
0
0
1
2
3
4
5
6
7
8
9
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 21A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
6V  
I D = 42A  
I D = 21A  
5V  
4V  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
24  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 21A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFH42N60P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
25ºC  
- 40ºC  
125ºC  
3.5  
0.3  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.2  
40  
0
10  
20  
30  
40  
50  
60  
70  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
120  
100  
80  
60  
40  
20  
0
10  
9
8
7
6
5
4
3
2
1
0
VDS = 300V  
I D = 21A  
I G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
10,000  
1,000  
100  
10  
100  
RDS(on) Limit  
100µs  
C
iss  
C
oss  
10  
TJ = 150ºC  
C
rss  
TC = 25ºC  
= 1 MHz  
5
Single Pulse  
f
1ms  
1
1
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFH42N60P3  
Fig. 13. Maximium Transient Thermal Impedance  
aaaa  
0.2  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_42P60P3(W7)03-24-11  
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