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IXFK102N30P

型号:

IXFK102N30P

描述:

PolarHT HiPerFET功率MOSFET[ PolarHT HiPerFET Power MOSFET ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

132 K

Preliminary Technical Information  
PolarHTTM HiPerFET  
Power MOSFET  
VDSS = 300 V  
ID25 = 102 A  
IXFK 102N30P  
RDS(on) 33 mΩ  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
trr  
200 ns  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-264 (IXFK)  
VDSS  
VDGR  
TJ = 25° C to 150° C  
TJ = 25° C to 150° C; RGS = 1 MΩ  
300  
300  
V
V
VGS  
Continuous  
Transient  
20  
30  
V
V
VGSM  
ID25  
TC =25° C  
102  
75  
A
A
A
G
D
S
ID(RMS)  
IDM  
External lead current limit  
TC = 25°C, pulse width limited by TJM  
(TAB)  
250  
IAR  
TC =25° C  
60  
A
G = Gate  
D = Drain  
EAR  
EAS  
TC =25° C  
TC =25° C  
60  
mJ  
J
S = Source  
2.5  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
,
10  
V/ns  
TC =25° C  
700  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
l
International standard package  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
l
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
l
Md  
Mounting torque, Terminal lead torque  
TO-264  
1.13/10 Nm/lb.in.  
10  
Advantages  
Weight  
g
l
Easy to mount  
Space savings  
High power density  
l
l
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
300  
V
V
2.5  
5.0  
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
33 mΩ  
Pulse test, t 300 µs, duty cycle d 2 %  
DS99221E(05/06)  
© 2006 IXYS All rights reserved  
IXFK 102N30P  
TO-264 Outline  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min.  
Typ.  
Max.  
VDS= 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
45  
57  
S
Ciss  
Coss  
Crss  
7500  
1150  
230  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
30  
28  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
RG = 3.3 (External)  
130  
30  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.021  
1.020  
.780  
.056  
.106  
.122  
.033  
1.030  
.786  
Qg(on)  
Qgs  
224  
50  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
c
0.53  
0.83  
D
25.91 26.16  
Qgd  
110  
E
e
19.81 19.96  
5.46 BSC  
.215 BSC  
RthJC  
RthCS  
0.18° C/W  
°C/W  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
0.15  
L
L1  
20.32 20.83  
2.29  
.800  
.090  
.820  
.102  
2.59  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Symbol  
IS  
Test Conditions  
Min.  
Typ.  
Max.  
VGS = 0 V  
Repetitive  
102  
A
A
V
ISM  
250  
1.5  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t 300 µs, duty cycle d2 %  
trr  
IF = 25 A, -di/dt = 100 A/µs  
200 ns  
QRM  
VR = 100 V, VGS = 0 V  
0.8  
µC  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered  
are derived from data gathered during objective characterizations of preliminary engineer-  
ing lots; but also may yet contain some information supplied during a pre-production  
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-  
sions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
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