Advanced Technical Information
HiPerFETTM
Power MOSFETs
IXFK 180N085
IXFX 180N085
VDSS = 85 V
ID25
RDS(on)
= 180 A
= 7 mW
Single MOSFET Die
trr £ 250 ns
PLUS 247TM (IXFX)
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
85
85
V
V
D (TAB)
G
D
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
ID(RMS)
IDM
TC = 25°C (MOSFET chip capability)
Externalleadcurrentlimit
TC = 25°C, Note 1
180
76
720
180
A
A
A
A
TO-264 AA (IXFK)
IAR
TC = 25°C
G
(TAB)
D
S
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
G = Gate
S = Source
D = Drain
TAB = Drain
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TJ
TC = 25°C
560
W
Features
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
• Internationalstandardpackages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• UnclampedInductiveSwitching(UIS)
rated
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
Mountingtorque
TO-264
0.9/6
Nm/lb.in.
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Weight
PLUS 247
TO-264
6
10
g
g
Applications
• DC-DC converters
• Synchronousrectification
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
• Temperatureandlightingcontrols
• Low voltage relays
Symbol
VDSS
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3mA
85
V
VGS(th)
IGSS
VDS = VGS, ID = 8mA
2.0
4.0 V
VGS = ±20 V, VDS = 0
±100nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 mA
2 mA
• PLUS 247TM package for clip or spring
mounting
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
7 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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