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IXFK180N10_09

型号：

IXFK180N10_09

描述：

HiPerFET功率MOSFET[ HiperFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

148 K

下载PDF手册
HiperFETTM Power  
MOSFETs  
VDSS = 100V  
ID25 = 180A  
RDS(on) ≤ 8mΩ  
IXFK180N10  
IXFX180N10  
Single MOSFET Die  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-264 (IXFK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
100  
100  
V
V
G
D
S
VDGR  
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXFX)  
ID25  
TC = 25°C ( Chip Capabitlty)  
180  
A
ILRMS  
IDM  
Leads Current Limit, RMS  
TC = 25°C, Pulse Width Limited by TJM  
160  
720  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
180  
3
A
J
(TAB)  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
5
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
560  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Packages  
z High Current Handling Capability  
z Avalanche Rated  
Md  
Mounting Force  
MountingTorque  
(PLUS247)  
(TO-264)  
20..120/4.5..27  
N/lb.  
Nm/lb.in.  
1.13/10  
z
Low RDS(on) HDMOSTM Process  
Weight  
PLUS247  
TO-264  
6
10  
g
g
z Fast intrinsic diode  
z Low Package Inductance  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
z
(TJ = 25°C, Unless Otherwise Specified)  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20V, VDS = 0V  
100  
2.0  
V
Applications  
4.0  
V
z DC-DC Converters  
z Battery Chargers  
±100 nA  
z Switched-Mode and Resonant-Mode  
Power Supplies  
IDSS  
VDS = VDSS  
VGS = 0V  
100 μA  
TJ = 125°C  
2 mA  
z DC Choppers  
z AC Motor Drives  
z Temperature and Lighting Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
8 mΩ  
DS98552D(02/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFK180N10  
IXFX180N10  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 (IXFK) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ. Max.  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
45  
76  
S
Ciss  
Coss  
Crss  
10.90  
3.55  
1.94  
nF  
nF  
nF  
td(on)  
tr  
td(off)  
tf  
50  
90  
140  
65  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
390  
55  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
195  
RthJC  
RthCS  
0.22 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
180  
720  
1.5  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 100A, VGS = 0V, Note 1  
PLUS 247TM (IXFX) Outline  
trr  
QRM  
IRM  
250 ns  
IF = 90A, -di/dt = 100A/μs  
1.1  
13  
μC  
A
VR = 50V, VGS = 0V  
Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFK180N10  
IXFX180N10  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGS = 10V  
VGS = 10V  
9V  
9V  
8V  
8V  
7V  
6V  
7V  
6V  
60  
40  
5V  
20  
5V  
0
0
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 90A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
180  
160  
140  
120  
100  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = 10V  
VGS = 10V  
9V  
8V  
7V  
6V  
I D = 180A  
I D = 90A  
60  
40  
5V  
20  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 90A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
180  
160  
140  
120  
100  
80  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
External Lead Current Limit  
VGS = 10V  
15V  
- - - - -  
TJ = 125ºC  
60  
40  
TJ = 25ºC  
20  
0
0
30  
60  
90 120 150 180 210 240 270 300 330  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_180N10(9X)2-24-09-B  
IXFK180N10  
IXFX180N10  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
140  
130  
120  
110  
100  
90  
TJ = - 40ºC  
TJ = - 40ºC  
25ºC  
125ºC  
25ºC  
125ºC  
80  
70  
60  
50  
40  
30  
50  
20  
25  
10  
0
0
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
1.4  
40  
0
50  
100  
150  
200  
250  
300  
400  
10  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 50V  
I
I
D = 90A  
G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
0
50  
100  
150  
200  
250  
300  
350  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
1.000  
0.100  
0.010  
0.001  
100  
10  
1
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
0.0001  
0.001  
0.01  
0.1  
1
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK180N10  
IXFX180N10  
Fig. 13. Forward-Bias Safe Operating Area  
@ TC = 25ºC  
Fig. 14. Forward-Bias Safe Operating Area  
@ TC = 75ºC  
1,000  
100  
10  
1,000  
100  
10  
R
Limit  
R
Limit  
DS(on)  
DS(on)  
25µs  
25µs  
100µs  
100µs  
1ms  
External Lead Limit  
1ms  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
T
T
= 150ºC  
= 75ºC  
T
T
= 150ºC  
= 25ºC  
J
J
C
C
Single Pulse  
Single Pulse  
1
1
1
10  
100  
1
10  
100  
VDS - Volts  
VDS - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_180N10(9X)2-24-09-B  
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