IXFK32N100P
IXFX32N100P
Symbol
Test Conditions
Characteristic Values
TO-264 (IXFK) Outline
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 20V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate input resistance
13
21
S
Ciss
Coss
Crss
14.2
815
60
nF
pF
pF
RGi
1.50
Ω
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
50
55
76
43
ns
ns
ns
ns
Millimeter
Inches
Dim.
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
Qg(on)
Qgs
225
85
nC
nC
nC
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
c
0.53
0.83
.021
1.020
.780
.033
1.030
.786
Qgd
94
D
E
e
25.91 26.16
19.81 19.96
5.46 BSC
RthJC
RthCS
0.13
°C/W
°C/W
.215 BSC
J
0.00
0.00
0.25
0.25
.000
.000
.010
.010
0.15
K
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
Source-Drain Diode
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
Symbol
Test Conditions
Characteristic Values
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
(TJ = 25°C unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
32
A
A
V
PLUS 247TM (IXFX) Outline
ISM
VSD
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
128
1.5
trr
QRM
IRM
300
ns
μC
A
IF = 16A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
2.2
15
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
PRELIMINARY TECHNICAL INFORMATION
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
